SQ4425EY Specs and Replacement
Type Designator: SQ4425EY
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 6.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 527 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: SO-8
SQ4425EY substitution
- MOSFET ⓘ Cross-Reference Search
SQ4425EY datasheet
sq4425ey.pdf
SQ4425EY www.vishay.com Vishay Siliconix Automotive P-Channel 30 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) - 30 AEC-Q101 Qualifiedc RDS(on) ( ) at VGS = - 10 V 0.012 100 % Rg and UIS Tested RDS(on) ( ) at VGS = - 4.5 V 0.019 Material categorization ID (A) - 18 For definitions of compliance please see Configuration Si... See More ⇒
Detailed specifications: SQ4182EY, SQ4184EY, SQ4282EY, SQ4284EY, SQ4330EY, SQ4401DY, SQ4401EY, SQ4410EY, 8205A, SQ4431EY, SQ4435EY, SQ4470EY, SQ4483EEY, SQ4483EY, SQ4532AEY, SQ4840EY, SQ4850EY
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
