SQ4425EY MOSFET. Datasheet pdf. Equivalent
Type Designator: SQ4425EY
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 6.8 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V
Maximum Drain Current |Id|: 18 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 33.6 nC
Rise Time (tr): 9 nS
Drain-Source Capacitance (Cd): 527 pF
Maximum Drain-Source On-State Resistance (Rds): 0.012 Ohm
Package: SO-8
SQ4425EY Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SQ4425EY Datasheet (PDF)
0.1. sq4425ey.pdf 
Size:253K _vishay
SQ4425EYwww.vishay.comVishay SiliconixAutomotive P-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) - 30 AEC-Q101 QualifiedcRDS(on) () at VGS = - 10 V 0.012 100 % Rg and UIS TestedRDS(on) () at VGS = - 4.5 V 0.019 Material categorization:ID (A) - 18For definitions of compliance please see Configuration Si
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