All MOSFET. SQ4425EY Datasheet

 

SQ4425EY Datasheet and Replacement


   Type Designator: SQ4425EY
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 6.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 527 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: SO-8
 

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SQ4425EY Datasheet (PDF)

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SQ4425EY

SQ4425EYwww.vishay.comVishay SiliconixAutomotive P-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) - 30 AEC-Q101 QualifiedcRDS(on) () at VGS = - 10 V 0.012 100 % Rg and UIS TestedRDS(on) () at VGS = - 4.5 V 0.019 Material categorization:ID (A) - 18For definitions of compliance please see Configuration Si

Datasheet: SQ4182EY , SQ4184EY , SQ4282EY , SQ4284EY , SQ4330EY , SQ4401DY , SQ4401EY , SQ4410EY , 2SK3878 , SQ4431EY , SQ4435EY , SQ4470EY , SQ4483EEY , SQ4483EY , SQ4532AEY , SQ4840EY , SQ4850EY .

History: LSB60R092GF

Keywords - SQ4425EY MOSFET datasheet

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