SQ4425EY Datasheet and Replacement
Type Designator: SQ4425EY
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 6.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Qg ⓘ - Total Gate Charge: 33.6 nC
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 527 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: SO-8
SQ4425EY substitution
SQ4425EY Datasheet (PDF)
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sq4425ey.pdf
sq4425ey.pdf
SQ4425EYwww.vishay.comVishay SiliconixAutomotive P-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) - 30 AEC-Q101 QualifiedcRDS(on) () at VGS = - 10 V 0.012 100 % Rg and UIS TestedRDS(on) () at VGS = - 4.5 V 0.019 Material categorization:ID (A) - 18For definitions of compliance please see Configuration Si
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