All MOSFET. SQ4470EY Datasheet

 

SQ4470EY Datasheet and Replacement


   Type Designator: SQ4470EY
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 7.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id| ⓘ - Maximum Drain Current: 16 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 45 nC
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 382 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: SO-8
 

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SQ4470EY Datasheet (PDF)

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SQ4470EY

SQ4470EYwww.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 60 AEC-Q101 QualifiedcRDS(on) () at VGS = 10 V 0.012 100 % Rg and UIS TestedRDS(on) () at VGS = 6 V 0.014 Material categorization:ID (A) 16For definitions of compliance please see Configuration Singlewww.

Datasheet: SQ4284EY , SQ4330EY , SQ4401DY , SQ4401EY , SQ4410EY , SQ4425EY , SQ4431EY , SQ4435EY , 7N65 , SQ4483EEY , SQ4483EY , SQ4532AEY , SQ4840EY , SQ4850EY , SQ4917EY , SQ4920EY , SQ4936EY .

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