SQ4840EY MOSFET. Datasheet pdf. Equivalent
Type Designator: SQ4840EY
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 7.1 W
Maximum Drain-Source Voltage |Vds|: 40 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V
Maximum Drain Current |Id|: 20.7 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 41 nC
Rise Time (tr): 11 nS
Drain-Source Capacitance (Cd): 505 pF
Maximum Drain-Source On-State Resistance (Rds): 0.009 Ohm
Package: SO-8
SQ4840EY Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SQ4840EY Datasheet (PDF)
0.1. sq4840ey.pdf 
Size:251K _vishay
SQ4840EYwww.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 40DefinitionRDS(on) () at VGS = 10 V 0.009 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.012 AEC-Q101 QualifiedID (A) 20.7 100 % Rg and UIS TestedConfiguration Single Compliant to Ro
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