All MOSFET. SQ4840EY Datasheet

 

SQ4840EY Datasheet and Replacement


   Type Designator: SQ4840EY
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 7.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 20.7 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 505 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: SO-8
 

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SQ4840EY Datasheet (PDF)

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SQ4840EY

SQ4840EYwww.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 40DefinitionRDS(on) () at VGS = 10 V 0.009 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.012 AEC-Q101 QualifiedID (A) 20.7 100 % Rg and UIS TestedConfiguration Single Compliant to Ro

Datasheet: SQ4410EY , SQ4425EY , SQ4431EY , SQ4435EY , SQ4470EY , SQ4483EEY , SQ4483EY , SQ4532AEY , 12N60 , SQ4850EY , SQ4917EY , SQ4920EY , SQ4936EY , SQ4937EY , SQ4940EY , SQ4942EY , SQ4946AEY .

History: BUK652R0-30C | TTP120N04AT

Keywords - SQ4840EY MOSFET datasheet

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