All MOSFET. SQ4850EY Datasheet

 

SQ4850EY MOSFET. Datasheet pdf. Equivalent

Type Designator: SQ4850EY

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 6.8 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V

Maximum Drain Current |Id|: 12 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 20 nC

Rise Time (tr): 9 nS

Drain-Source Capacitance (Cd): 185 pF

Maximum Drain-Source On-State Resistance (Rds): 0.022 Ohm

Package: SO-8

SQ4850EY Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SQ4850EY Datasheet (PDF)

0.1. sq4850ey.pdf Size:250K _vishay

SQ4850EY
SQ4850EY

SQ4850EYwww.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 60 AEC-Q101 QualifiedRDS(on) () at VGS = 10 V 0.022 100 % Rg and UIS TestedRDS(on) () at VGS = 4.5 V 0.031 Material categorization:ID (A) 12For definitions of compliance please see Configuration Singlewww

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