All MOSFET. SQ4850EY Datasheet

 

SQ4850EY Datasheet and Replacement


   Type Designator: SQ4850EY
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 6.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 185 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: SO-8
 

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SQ4850EY Datasheet (PDF)

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SQ4850EY

SQ4850EYwww.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 60 AEC-Q101 QualifiedRDS(on) () at VGS = 10 V 0.022 100 % Rg and UIS TestedRDS(on) () at VGS = 4.5 V 0.031 Material categorization:ID (A) 12For definitions of compliance please see Configuration Singlewww

Datasheet: SQ4425EY , SQ4431EY , SQ4435EY , SQ4470EY , SQ4483EEY , SQ4483EY , SQ4532AEY , SQ4840EY , K4145 , SQ4917EY , SQ4920EY , SQ4936EY , SQ4937EY , SQ4940EY , SQ4942EY , SQ4946AEY , SQ4949EY .

History: RJK03A4DPA | KRF7313 | STB20NM60-1 | SQ9407EY | SSM3J317T | NCEP050N12AGU | OSS65R340DF

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