SQ4850EY Datasheet. Specs and Replacement

Type Designator: SQ4850EY  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 6.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 185 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm

Package: SO-8

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SQ4850EY datasheet

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SQ4850EY

SQ4850EY www.vishay.com Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 60 AEC-Q101 Qualified RDS(on) ( ) at VGS = 10 V 0.022 100 % Rg and UIS Tested RDS(on) ( ) at VGS = 4.5 V 0.031 Material categorization ID (A) 12 For definitions of compliance please see Configuration Single www... See More ⇒

Detailed specifications: SQ4425EY, SQ4431EY, SQ4435EY, SQ4470EY, SQ4483EEY, SQ4483EY, SQ4532AEY, SQ4840EY, IRF9540N, SQ4917EY, SQ4920EY, SQ4936EY, SQ4937EY, SQ4940EY, SQ4942EY, SQ4946AEY, SQ4949EY

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.