SQ4850EY Datasheet and Replacement
Type Designator: SQ4850EY
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 6.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 185 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
Package: SO-8
SQ4850EY substitution
SQ4850EY Datasheet (PDF)
sq4850ey.pdf
SQ4850EYwww.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 60 AEC-Q101 QualifiedRDS(on) () at VGS = 10 V 0.022 100 % Rg and UIS TestedRDS(on) () at VGS = 4.5 V 0.031 Material categorization:ID (A) 12For definitions of compliance please see Configuration Singlewww
Datasheet: SQ4425EY , SQ4431EY , SQ4435EY , SQ4470EY , SQ4483EEY , SQ4483EY , SQ4532AEY , SQ4840EY , K3569 , SQ4917EY , SQ4920EY , SQ4936EY , SQ4937EY , SQ4940EY , SQ4942EY , SQ4946AEY , SQ4949EY .
History: 1N60G-TMS4-T | 10N60G-TF1-T | 2SJ626 | 10N60L-TF2-T
Keywords - SQ4850EY MOSFET datasheet
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History: 1N60G-TMS4-T | 10N60G-TF1-T | 2SJ626 | 10N60L-TF2-T
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