All MOSFET. IXFX90N30 Datasheet

 

IXFX90N30 Datasheet and Replacement


   Type Designator: IXFX90N30
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 560 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 90 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 360 nC
   tr ⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 1800 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.033 Ohm
   Package: TO247
 

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IXFX90N30 Datasheet (PDF)

 ..1. Size:125K  ixys
 ixfx90n30 ixfk90n30.pdf pdf_icon

IXFX90N30

IXFX 90N30 VDSS = 300 VHiPerFETTMIXFK 90N30 ID25 = 90 APower MOSFETsRDS(on) = 33 mSingle MOSFET Die trr 250 ns Symbol Test Conditions Maximum Ratings PLUS 247TMVDSS TJ = 25C to 150C 300 VVDGR TJ = 25C to 150C; RGS = 1 M 300 V(TAB)GVGS Continuous 20 VDVGSM Transient 30 VID25 TC = 25C (MOSFET chip capabi

 7.1. Size:197K  ixys
 ixfk90n60x ixfx90n60x.pdf pdf_icon

IXFX90N30

Preliminary Technical InformationX-Class HiPerFETTM VDSS = 600VIXFK90N60XPower MOSFET ID25 = 90AIXFX90N60X RDS(on) 38m N-Channel Enhancement ModeAvalanche RatedTO-264P (IXFK)Fast Intrinsic DiodeSymbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 150C 600 VDTabVDGR TJ = 25C to 150C, RGS = 1M 600 VSVGSS

 7.2. Size:52K  ixys
 ixfx90n20q ixfk90n20q.pdf pdf_icon

IXFX90N30

HiPerFETTM IXFX 90N20Q VDSS = 200 VIXFK 90N20Q ID25 = 90 APower MOSFETs RDS(on) = 22 mQ-CLASSSingle MOSFET Die trr s 200 N-Channel Enhancement ModeAvalanche Rated, Low Qg, High dV/dt, Low trrPLUS 247TM (IXFX)Symbol Test Conditions Maximum Ratings (TAB)GDVDSS TJ = 25C to 150C 200 VVDGR TJ = 25C to 150

 9.1. Size:135K  ixys
 ixfk94n50p2 ixfx94n50p2.pdf pdf_icon

IXFX90N30

Polar2TM HiPerFETTM VDSS = 500VIXFK94N50P2Power MOSFET ID25 = 94AIXFX94N50P2 RDS(on) 55m N-Channel Enhancement ModeAvalanche RatedTO-264 (IXFK)Fast Intrinsic DiodeGSymbol Test Conditions Maximum RatingsDSVDSS TJ = 25C to 150C 500 VTabVDGR TJ = 25C to 150C, RGS = 1M 500 VVGSS Continuous 30 VPLUS247 (IXFX)VGSM Tr

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Datasheet: IXFX28N60 , IXFX32N50Q , IXFX34N80 , IXFX44N60 , IXFX48N50Q , IXFX50N50 , IXFX55N50 , IXFX90N20Q , IRF830 , IXTA1N100 , IXTA2N80 , IXTH10N100 , IXTH10N90 , IXTH10P50 , IXTH11N80 , IXTH11P50 , IXTH12N100 .

History: D50N06

Keywords - IXFX90N30 MOSFET datasheet

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