IXTA1N100 Specs and Replacement
Type Designator: IXTA1N100
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 54 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 1.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 19 nS
Cossⓘ - Output Capacitance: 37 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 11 Ohm
Package: TO263AA
IXTA1N100 substitution
- MOSFET ⓘ Cross-Reference Search
IXTA1N100 datasheet
ixta1n100 ixtp1n100.pdf
VDSS = 1000 V IXTA 1N100 High Voltage MOSFET IXTP 1N100 ID25 = 1.5 A RDS(on) = 11 N-Channel Enhancement Mode Avalanche Energy Rated Symbol Test Conditions Maximum Ratings TO-220AB (IXTP) VDSS TJ = 25 C to 150 C 1000 V VDGR TJ = 25 C to 150 C; RGS = 1 M 1000 V VGS Continuous 30 V D (TAB) G VGSM Transient 40 V D S ID25 TC = 25 C 1.5 A IDM TC =... See More ⇒
ixta1n100p ixtp1n100p.pdf
Advance Technical Information IXTA 1N100P VDSS = 1000 V PolarHVTM IXTP 1N100P ID25 = 1.2 A Power MOSFET RDS(on) = 13 N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 150 C 1000 V VDGR TJ = 25 C to 150 C; RGS = 1 M 1000 V G VGS Continuous 20 V S (TAB) VGSM Transient 30 V ID25 TC = 25 C... See More ⇒
ixta1n100p.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IXTA1N100P FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE... See More ⇒
ixta1n170dhv ixth1n170dhv.pdf
Advance Technical Information Depletion Mode VDSX = 1700V IXTA1N170DHV MOSFET ID(on) > 1A IXTH1N170DHV RDS(on) 16 N-Channel TO-263HV (IXTA) G S D (Tab) TO-247HV (IXTH) Symbol Test Conditions Maximum Ratings VDSX TJ = 25 C to 150 C 1700 V VDGX TJ = 25 C to 150 C, RGS = 1M 1700 V VGSX Continuous 20 V VGSM Transient 30 V ... See More ⇒
Detailed specifications: IXFX32N50Q, IXFX34N80, IXFX44N60, IXFX48N50Q, IXFX50N50, IXFX55N50, IXFX90N20Q, IXFX90N30, 8N60, IXTA2N80, IXTH10N100, IXTH10N90, IXTH10P50, IXTH11N80, IXTH11P50, IXTH12N100, IXTH12N45MA
Keywords - IXTA1N100 MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
