SQD19P06-60L Specs and Replacement

Type Designator: SQD19P06-60L

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 46 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 160 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm

Package: TO-252

SQD19P06-60L substitution

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SQD19P06-60L datasheet

 ..1. Size:170K  vishay
 sqd19p06-60l.pdf pdf_icon

SQD19P06-60L

SQD19P06-60L www.vishay.com Vishay Siliconix Automotive P-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) - 60 Definition RDS(on) ( ) at VGS = - 10 V 0.055 TrenchFET Power MOSFET RDS(on) ( ) at VGS = - 4.5 V 0.100 Package with Low Thermal Resistance ID (A) - 20 100 % Rg and UIS Tested Configuration ... See More ⇒

 ..2. Size:1440K  cn vbsemi
 sqd19p06-60l.pdf pdf_icon

SQD19P06-60L

SQD19P06-60L www.VBsemi.tw P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ) Definition 0.053 at VGS = - 10 V - 25 TrenchFET Power MOSFET - 60 26 0.062 at VGS = - 4.5 V - 20 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS High Side Switch for Full Bridge... See More ⇒

Detailed specifications: SQA410EJ, SQD07N25-350H, SQD100N03-3M2L, SQD100N03-3M4, SQD100N04-3M6, SQD100N04-3M6L, SQD10N30-330H, SQD15N06-42L, IRFP250, SQD23N06-31L, SQD25N06-22L, SQD25N15-52, SQD30N05-20L, SQD35N05-26L, SQD40N04-10A, SQD40N06-14L, SQD40N10-25

Keywords - SQD19P06-60L MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.