All MOSFET. SQD19P06-60L Datasheet

 

SQD19P06-60L Datasheet and Replacement


   Type Designator: SQD19P06-60L
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 46 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 27 nC
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 160 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
   Package: TO-252
 

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SQD19P06-60L Datasheet (PDF)

 ..1. Size:170K  vishay
 sqd19p06-60l.pdf pdf_icon

SQD19P06-60L

SQD19P06-60Lwww.vishay.comVishay SiliconixAutomotive P-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 60DefinitionRDS(on) () at VGS = - 10 V 0.055 TrenchFET Power MOSFETRDS(on) () at VGS = - 4.5 V 0.100 Package with Low Thermal ResistanceID (A) - 20 100 % Rg and UIS TestedConfiguration

 ..2. Size:1440K  cn vbsemi
 sqd19p06-60l.pdf pdf_icon

SQD19P06-60L

SQD19P06-60Lwww.VBsemi.twP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ)Definition0.053 at VGS = - 10 V - 25 TrenchFET Power MOSFET- 60 260.062 at VGS = - 4.5 V - 20 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS High Side Switch for Full Bridge

Datasheet: SQA410EJ , SQD07N25-350H , SQD100N03-3M2L , SQD100N03-3M4 , SQD100N04-3M6 , SQD100N04-3M6L , SQD10N30-330H , SQD15N06-42L , STF13NM60N , SQD23N06-31L , SQD25N06-22L , SQD25N15-52 , SQD30N05-20L , SQD35N05-26L , SQD40N04-10A , SQD40N06-14L , SQD40N10-25 .

Keywords - SQD19P06-60L MOSFET datasheet

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