SQD23N06-31L Datasheet. Specs and Replacement

Type Designator: SQD23N06-31L  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 37 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 23 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 144 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.031 Ohm

Package: TO-252

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SQD23N06-31L datasheet

 ..1. Size:167K  vishay
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SQD23N06-31L

SQD23N06-31L www.vishay.com Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition RDS(on) ( ) at VGS = 10 V 0.031 TrenchFET Power MOSFET RDS(on) ( ) at VGS = 4.5 V 0.045 100 % Rg and UIS Tested ID (A) 23 Compliant to RoHS Directive 2002/95/EC Configuration Singl... See More ⇒

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SQD23N06-31L

SQD23N06-31L Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition RDS(on) ( ) at VGS = 10 V 0.031 TrenchFET Power MOSFET RDS(on) ( ) at VGS = 4.5 V 0.045 Compliant to RoHS Directive 2002/95/EC ID (A) 23 AEC-Q101 Qualifiedd Configuration Single Find out mor... See More ⇒

Detailed specifications: SQD07N25-350H, SQD100N03-3M2L, SQD100N03-3M4, SQD100N04-3M6, SQD100N04-3M6L, SQD10N30-330H, SQD15N06-42L, SQD19P06-60L, 10N65, SQD25N06-22L, SQD25N15-52, SQD30N05-20L, SQD35N05-26L, SQD40N04-10A, SQD40N06-14L, SQD40N10-25, SQD40P10-40L

Keywords - SQD23N06-31L MOSFET specs

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