SQD23N06-31L PDF Specs and Replacement
Type Designator: SQD23N06-31L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 37 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 23 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 144 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.031 Ohm
Package: TO-252
SQD23N06-31L substitution
SQD23N06-31L PDF Specs
sqd23n06-31l.pdf
SQD23N06-31L www.vishay.com Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition RDS(on) ( ) at VGS = 10 V 0.031 TrenchFET Power MOSFET RDS(on) ( ) at VGS = 4.5 V 0.045 100 % Rg and UIS Tested ID (A) 23 Compliant to RoHS Directive 2002/95/EC Configuration Singl... See More ⇒
sqd23n06.pdf
SQD23N06-31L Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition RDS(on) ( ) at VGS = 10 V 0.031 TrenchFET Power MOSFET RDS(on) ( ) at VGS = 4.5 V 0.045 Compliant to RoHS Directive 2002/95/EC ID (A) 23 AEC-Q101 Qualifiedd Configuration Single Find out mor... See More ⇒
Detailed specifications: SQD07N25-350H , SQD100N03-3M2L , SQD100N03-3M4 , SQD100N04-3M6 , SQD100N04-3M6L , SQD10N30-330H , SQD15N06-42L , SQD19P06-60L , IRF1407 , SQD25N06-22L , SQD25N15-52 , SQD30N05-20L , SQD35N05-26L , SQD40N04-10A , SQD40N06-14L , SQD40N10-25 , SQD40P10-40L .
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