All MOSFET. SQD23N06-31L Datasheet

 

SQD23N06-31L Datasheet and Replacement


   Type Designator: SQD23N06-31L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 37 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 23 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 144 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.031 Ohm
   Package: TO-252
 

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SQD23N06-31L Datasheet (PDF)

 ..1. Size:167K  vishay
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SQD23N06-31L

SQD23N06-31Lwww.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60DefinitionRDS(on) () at VGS = 10 V 0.031 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.045 100 % Rg and UIS TestedID (A) 23 Compliant to RoHS Directive 2002/95/ECConfiguration Singl

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SQD23N06-31L

SQD23N06-31LVishay SiliconixAutomotiveN-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60DefinitionRDS(on) () at VGS = 10 V 0.031 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.045 Compliant to RoHS Directive 2002/95/ECID (A) 23 AEC-Q101 QualifieddConfiguration Single Find out mor

Datasheet: SQD07N25-350H , SQD100N03-3M2L , SQD100N03-3M4 , SQD100N04-3M6 , SQD100N04-3M6L , SQD10N30-330H , SQD15N06-42L , SQD19P06-60L , P0903BDG , SQD25N06-22L , SQD25N15-52 , SQD30N05-20L , SQD35N05-26L , SQD40N04-10A , SQD40N06-14L , SQD40N10-25 , SQD40P10-40L .

Keywords - SQD23N06-31L MOSFET datasheet

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