All MOSFET. SQD45P03-12 Datasheet

 

SQD45P03-12 Datasheet and Replacement


   Type Designator: SQD45P03-12
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 71 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 55.3 nC
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 616 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: TO-252
 

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SQD45P03-12 Datasheet (PDF)

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SQD45P03-12

SQD45P03-12www.vishay.comVishay SiliconixAutomotive P-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) - 30 Package with Low Thermal ResistanceRDS(on) () at VGS = - 10 V 0.010 AEC-Q101 QualifieddRDS(on) () at VGS = - 4.5 V 0.024 100 % Rg and UIS TestedID (A) - 50 Material categorization:Configuration Sing

Datasheet: SQD25N06-22L , SQD25N15-52 , SQD30N05-20L , SQD35N05-26L , SQD40N04-10A , SQD40N06-14L , SQD40N10-25 , SQD40P10-40L , CS150N03A8 , SQD50N02-04L , SQD50N03-06P , SQD50N03-09 , SQD50N03-4M0L , SQD50N04-09H , SQD50N04-3M5L , SQD50N04-4M1 , SQD50N04-4M5L .

Keywords - SQD45P03-12 MOSFET datasheet

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