SQD45P03-12 Specs and Replacement

Type Designator: SQD45P03-12

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 71 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 616 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm

Package: TO-252

SQD45P03-12 substitution

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SQD45P03-12 datasheet

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SQD45P03-12

SQD45P03-12 www.vishay.com Vishay Siliconix Automotive P-Channel 30 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) - 30 Package with Low Thermal Resistance RDS(on) ( ) at VGS = - 10 V 0.010 AEC-Q101 Qualifiedd RDS(on) ( ) at VGS = - 4.5 V 0.024 100 % Rg and UIS Tested ID (A) - 50 Material categorization Configuration Sing... See More ⇒

Detailed specifications: SQD25N06-22L, SQD25N15-52, SQD30N05-20L, SQD35N05-26L, SQD40N04-10A, SQD40N06-14L, SQD40N10-25, SQD40P10-40L, IRF520, SQD50N02-04L, SQD50N03-06P, SQD50N03-09, SQD50N03-4M0L, SQD50N04-09H, SQD50N04-3M5L, SQD50N04-4M1, SQD50N04-4M5L

Keywords - SQD45P03-12 MOSFET specs

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