All MOSFET. SQD90P04-9M4L Datasheet

 

SQD90P04-9M4L Datasheet and Replacement


   Type Designator: SQD90P04-9M4L
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 136 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 90 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 852 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0094 Ohm
   Package: TO-252
 

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SQD90P04-9M4L Datasheet (PDF)

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SQD90P04-9M4L

SQD90P04-9m4Lwww.vishay.comVishay SiliconixAutomotive P-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) - 40 Package with Low Thermal ResistanceRDS(on) () at VGS = - 10 V 0.0094 100 % Rg and UIS TestedRDS(on) () at VGS = - 4.5 V 0.0160 AEC-Q101 QualifieddID (A) - 90 Material categorization:Configurati

Datasheet: SQD50N10-8M9L , SQD50N30-4M0L , SQD50P03-07 , SQD50P04-09L , SQD50P04-13L , SQD50P06-15L , SQD50P08-25L , SQD50P08-28 , AON7403 , SQD97N06-6M3L , SQJ401EP , SQJ402EP , SQJ403EEP , SQJ403EP , SQJ410EP , SQJ412EP , SQJ422EP .

History: IXTA88N085T7

Keywords - SQD90P04-9M4L MOSFET datasheet

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