SQD97N06-6M3L Datasheet and Replacement
Type Designator: SQD97N06-6M3L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 136 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 97 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 441 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0063 Ohm
Package: TO-252
SQD97N06-6M3L substitution
SQD97N06-6M3L Datasheet (PDF)
sqd97n06-6m3l.pdf
SQD97N06-6m3Lwww.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 60 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.0063 100 % Rg and UIS TestedRDS(on) () at VGS = 4.5 V 0.0069 AEC-Q101 QualifieddID (A) 97 Material categorization:Configuration Single
Datasheet: SQD50N30-4M0L , SQD50P03-07 , SQD50P04-09L , SQD50P04-13L , SQD50P06-15L , SQD50P08-25L , SQD50P08-28 , SQD90P04-9M4L , MMIS60R580P , SQJ401EP , SQJ402EP , SQJ403EEP , SQJ403EP , SQJ410EP , SQJ412EP , SQJ422EP , SQJ431EP .
History: RSQ030P03TR | FDD86567-F085 | FDD86380-F085 | RJK4532DPD | RSQ025P03FRA | HM3415E | TSD120N10AT
Keywords - SQD97N06-6M3L MOSFET datasheet
SQD97N06-6M3L cross reference
SQD97N06-6M3L equivalent finder
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SQD97N06-6M3L substitution
SQD97N06-6M3L replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and datasheets
History: RSQ030P03TR | FDD86567-F085 | FDD86380-F085 | RJK4532DPD | RSQ025P03FRA | HM3415E | TSD120N10AT
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