All MOSFET. SQD97N06-6M3L Datasheet

 

SQD97N06-6M3L Datasheet and Replacement


   Type Designator: SQD97N06-6M3L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 136 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 97 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 441 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0063 Ohm
   Package: TO-252
 

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SQD97N06-6M3L Datasheet (PDF)

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SQD97N06-6M3L

SQD97N06-6m3Lwww.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 60 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.0063 100 % Rg and UIS TestedRDS(on) () at VGS = 4.5 V 0.0069 AEC-Q101 QualifieddID (A) 97 Material categorization:Configuration Single

Datasheet: SQD50N30-4M0L , SQD50P03-07 , SQD50P04-09L , SQD50P04-13L , SQD50P06-15L , SQD50P08-25L , SQD50P08-28 , SQD90P04-9M4L , MMIS60R580P , SQJ401EP , SQJ402EP , SQJ403EEP , SQJ403EP , SQJ410EP , SQJ412EP , SQJ422EP , SQJ431EP .

History: RSQ030P03TR | FDD86567-F085 | FDD86380-F085 | RJK4532DPD | RSQ025P03FRA | HM3415E | TSD120N10AT

Keywords - SQD97N06-6M3L MOSFET datasheet

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