SQD97N06-6M3L Datasheet. Specs and Replacement

Type Designator: SQD97N06-6M3L

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 136 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 97 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 441 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0063 Ohm

Package: TO-252

SQD97N06-6M3L substitution

- MOSFET ⓘ Cross-Reference Search

 

SQD97N06-6M3L datasheet

 ..1. Size:166K  vishay
 sqd97n06-6m3l.pdf pdf_icon

SQD97N06-6M3L

SQD97N06-6m3L www.vishay.com Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 60 Package with Low Thermal Resistance RDS(on) ( ) at VGS = 10 V 0.0063 100 % Rg and UIS Tested RDS(on) ( ) at VGS = 4.5 V 0.0069 AEC-Q101 Qualifiedd ID (A) 97 Material categorization Configuration Single ... See More ⇒

Detailed specifications: SQD50N30-4M0L, SQD50P03-07, SQD50P04-09L, SQD50P04-13L, SQD50P06-15L, SQD50P08-25L, SQD50P08-28, SQD90P04-9M4L, MMIS60R580P, SQJ401EP, SQJ402EP, SQJ403EEP, SQJ403EP, SQJ410EP, SQJ412EP, SQJ422EP, SQJ431EP

Keywords - SQD97N06-6M3L MOSFET specs

 SQD97N06-6M3L cross reference

 SQD97N06-6M3L equivalent finder

 SQD97N06-6M3L pdf lookup

 SQD97N06-6M3L substitution

 SQD97N06-6M3L replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs