All MOSFET. SQJ422EP Datasheet

 

SQJ422EP Datasheet and Replacement


   Type Designator: SQJ422EP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 75 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 67 nC
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 553 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0034 Ohm
   Package: POWERPAK-SO-8L
 

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SQJ422EP Datasheet (PDF)

 ..1. Size:169K  vishay
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SQJ422EP

SQJ422EPwww.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 40 100 % Rg and UIS TestedRDS(on) () at VGS = 10 V 0.0034 AEC-Q101 QualifiedcRDS(on) () at VGS = 4.5 V 0.0043 Material categorization:ID (A) 75For definitions of compliance please seeConfiguration Singlewww.

 9.1. Size:279K  vishay
 sqj420ep.pdf pdf_icon

SQJ422EP

SQJ420EPwww.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPowerPAK SO-8L Single TrenchFET power MOSFET AEC-Q101 qualified 100 % Rg and UIS testedD Material categorization: for definitions of compliance please see 1Swww.vishay.com/doc?999122S3DS41 GTop View Bottom ViewPRODUCT SUMMARYGVDS (V) 40R

Datasheet: SQD90P04-9M4L , SQD97N06-6M3L , SQJ401EP , SQJ402EP , SQJ403EEP , SQJ403EP , SQJ410EP , SQJ412EP , IRFZ44N , SQJ431EP , SQJ443EP , SQJ456EP , SQJ460AEP , SQJ460EP , SQJ461EP , SQJ463EP , SQJ465EP .

History: IXFR102N30P | IXTA1N80 | IRFF212 | SI4122DY | STP8NM50FP | IXTA1N120P

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