All MOSFET. SQJ431EP Datasheet

 

SQJ431EP MOSFET. Datasheet pdf. Equivalent


   Type Designator: SQJ431EP
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 71 nC
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 193 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.213 Ohm
   Package: POWERPAK-SO-8L

 SQJ431EP Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SQJ431EP Datasheet (PDF)

 ..1. Size:155K  vishay
 sqj431ep.pdf

SQJ431EP SQJ431EP

SQJ431EPwww.vishay.comVishay SiliconixAutomotive P-Channel 200 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 200DefinitionRDS(on) () at VGS = - 10 V 0.213 TrenchFET Power MOSFETRDS(on) () at VGS = - 6 V 0.221 AEC-Q101 QualifieddID (A) - 12 100 % Rg and UIS TestedConfiguration Single Complian

 9.1. Size:214K  vishay
 sqj433ep.pdf

SQJ431EP SQJ431EP

SQJ433EPwww.vishay.comVishay SiliconixAutomotive P-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) -30 100 % Rg and UIS testedRDS(on) () at VGS = -10 V 0.0081 AEC-Q101 qualified cRDS(on) () at VGS = -4.5 V 0.0170 Material categorization: ID (A) -75for definitions of compliance please see Configuration Single

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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