All MOSFET. SQJ488EP Datasheet

 

SQJ488EP Datasheet and Replacement


   Type Designator: SQJ488EP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 42 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 372 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm
   Package: POWERPAK-SO-8L
 

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SQJ488EP Datasheet (PDF)

 ..1. Size:222K  vishay
 sqj488ep.pdf pdf_icon

SQJ488EP

SQJ488EPwww.vishay.comVishay SiliconixAutomotive N-Channel 100 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 100 AEC-Q101 qualified dRDS(on) () at VGS = 10 V 0.0210 100 % Rg and UIS testedRDS(on) () at VGS = 4.5 V 0.0258 Material categorization: ID (A) 42for definitions of compliance please Configuration Singlesee w

 9.1. Size:230K  vishay
 sqj486ep.pdf pdf_icon

SQJ488EP

SQJ486EPwww.vishay.comVishay SiliconixAutomotive N-Channel 75 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 75 AEC-Q101 qualified dRDS(on) () at VGS = 10 V 0.026 100 % Rg and UIS testedRDS(on) () at VGS = 4.5 V 0.032 Material categorization:ID (A) 30For definitions of compliance please seeConfiguration Singlewww.vis

Datasheet: SQJ456EP , SQJ460AEP , SQJ460EP , SQJ461EP , SQJ463EP , SQJ465EP , SQJ469EP , SQJ486EP , IRF1404 , SQJ500AEP , SQJ840EP , SQJ844AEP , SQJ844EP , SQJ848AEP , SQJ848EP , SQJ850EP , SQJ858AEP .

History: SQJ840EP | CEM0310 | SQJ848EP | APT10078BFLLG

Keywords - SQJ488EP MOSFET datasheet

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