All MOSFET. SQJ500AEP Datasheet

 

SQJ500AEP Datasheet and Replacement


   Type Designator: SQJ500AEP
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 218 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0092 Ohm
   Package: POWERPAK-SO-8L
 

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SQJ500AEP Datasheet (PDF)

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SQJ500AEP

SQJ500AEPwww.vishay.comVishay SiliconixAutomotive N- and P-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETN-CHANNEL P-CHANNEL AEC-Q101 QualifieddVDS (V) 40 -40 100 % Rg and UIS TestedRDS(on) () at VGS = 10 V 0.0092 0.0270 Material categorization: RDS(on) () at VGS = 4.5 V 0.0112 0.0435For definitions of com

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