All MOSFET. SQJ500AEP Datasheet

 

SQJ500AEP MOSFET. Datasheet pdf. Equivalent


   Type Designator: SQJ500AEP
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
   |Id|ⓘ - Maximum Drain Current: 30 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 25.5 nC
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 218 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0092 Ohm
   Package: POWERPAK-SO-8L

 SQJ500AEP Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SQJ500AEP Datasheet (PDF)

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 sqj500aep.pdf

SQJ500AEP SQJ500AEP

SQJ500AEPwww.vishay.comVishay SiliconixAutomotive N- and P-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETN-CHANNEL P-CHANNEL AEC-Q101 QualifieddVDS (V) 40 -40 100 % Rg and UIS TestedRDS(on) () at VGS = 10 V 0.0092 0.0270 Material categorization: RDS(on) () at VGS = 4.5 V 0.0112 0.0435For definitions of com

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: ECH8652

 

 
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