SQJ848EP Specs and Replacement

Type Designator: SQJ848EP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 68 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 47 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 260 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm

Package: POWERPAK-SO-8L

SQJ848EP substitution

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SQJ848EP datasheet

 ..1. Size:190K  vishay
 sqj848ep.pdf pdf_icon

SQJ848EP

SQJ848EP www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 40 AEC-Q101 Qualified RDS(on) ( ) at VGS = 10 V 0.0075 100 % Rg and UIS Tested RDS(on) ( ) at VGS = 4.5 V 0.0120 Material categorization ID (A) 47 For definitions of compliance please see Configuration Single www.v... See More ⇒

 8.1. Size:178K  vishay
 sqj848aep.pdf pdf_icon

SQJ848EP

SQJ848AEP www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 40 100 % Rg and UIS Tested RDS(on) ( ) at VGS = 10 V 0.0076 AEC-Q101 Qualifiedd RDS(on) ( ) at VGS = 4.5 V 0.0086 Material categorization ID (A) 24 For definitions of compliance please see Configuration Single www... See More ⇒

 9.1. Size:220K  vishay
 sqj844aep.pdf pdf_icon

SQJ848EP

SQJ844AEP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 30 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 30 AEC-Q101 qualified RDS(on) ( ) at VGS = 10 V 0.0166 100 % Rg and UIS tested RDS(on) ( ) at VGS = 4.5 V 0.0276 Material categorization ID (A) per leg 8 for definitions of compliance please Configuration Dual ... See More ⇒

 9.2. Size:151K  vishay
 sqj844ep.pdf pdf_icon

SQJ848EP

SQJ844EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 30 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 30 Definition RDS(on) ( ) at VGS = 10 V 0.024 TrenchFET Power MOSFET RDS(on) ( ) at VGS = 4.5 V 0.037 AEC-Q101 Qualifiedd ID (A) per leg 8 100 % Rg and UIS Tested Configuration Dual Compliant... See More ⇒

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Detailed specifications: SQJ469EP, SQJ486EP, SQJ488EP, SQJ500AEP, SQJ840EP, SQJ844AEP, SQJ844EP, SQJ848AEP, IRFB4227, SQJ850EP, SQJ858AEP, SQJ858EP, SQJ884EP, SQJ886EP, SQJ910AEP, SQJ912AEP, SQJ912EP

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