SQJ848EP - параметры транзистора MOSFET, его аналоги, datasheet

SQJ848EP Datasheet (PDF)

..1. Size:190K vishay
sqj848ep.pdf pdf_icon

SQJ848EPwww.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 40 AEC-Q101 QualifiedRDS(on) () at VGS = 10 V 0.0075 100 % Rg and UIS TestedRDS(on) () at VGS = 4.5 V 0.0120 Material categorization:ID (A) 47For definitions of compliance please seeConfiguration Singlewww.v

8.1. Size:178K vishay
sqj848aep.pdf pdf_icon

SQJ848AEPwww.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 40 100 % Rg and UIS TestedRDS(on) () at VGS = 10 V 0.0076 AEC-Q101 QualifieddRDS(on) () at VGS = 4.5 V 0.0086 Material categorization:ID (A) 24For definitions of compliance please seeConfiguration Singlewww

9.1. Size:220K vishay
sqj844aep.pdf pdf_icon

SQJ844AEPwww.vishay.comVishay SiliconixAutomotive Dual N-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 30 AEC-Q101 qualifiedRDS(on) () at VGS = 10 V 0.0166 100 % Rg and UIS testedRDS(on) () at VGS = 4.5 V 0.0276 Material categorization:ID (A) per leg 8for definitions of compliance pleaseConfiguration Dual

9.2. Size:151K vishay
sqj844ep.pdf pdf_icon

SQJ844EPwww.vishay.comVishay SiliconixAutomotive Dual N-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 30DefinitionRDS(on) () at VGS = 10 V 0.024 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.037 AEC-Q101 QualifieddID (A) per leg 8 100 % Rg and UIS TestedConfiguration Dual Compliant