All MOSFET. SQJ884EP Datasheet

 

SQJ884EP Datasheet and Replacement


   Type Designator: SQJ884EP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 55 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 32 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 360 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: POWERPAK-SO-8L
 

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SQJ884EP Datasheet (PDF)

 ..1. Size:178K  vishay
 sqj884ep.pdf pdf_icon

SQJ884EP

SQJ884EPwww.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 40 AEC-Q101 QualifieddRDS(on) () at VGS = 10 V 0.006 100 % Rg and UIS TestedRDS(on) () at VGS = 4.5 V 0.008 Material categorization:ID (A) 32For definitions of compliance please seeConfiguration Singlewww.vi

 9.1. Size:170K  vishay
 sqj886ep.pdf pdf_icon

SQJ884EP

SQJ886EPwww.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 40 AEC-Q101 QualifiedcRDS(on) () at VGS = 10 V 0.0045 100 % Rg and UIS TestedRDS(on) () at VGS = 4.5 V 0.0055 Material categorization:ID (A) 60For definitions of compliance please seeConfiguration Singlewww.

Datasheet: SQJ840EP , SQJ844AEP , SQJ844EP , SQJ848AEP , SQJ848EP , SQJ850EP , SQJ858AEP , SQJ858EP , IRFP250N , SQJ886EP , SQJ910AEP , SQJ912AEP , SQJ912EP , SQJ940EP , SQJ941EP , SQJ942EP , SQJ951EP .

History: SI4210DY

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