SQJ884EP Specs and Replacement

Type Designator: SQJ884EP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 55 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 32 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 360 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm

Package: POWERPAK-SO-8L

SQJ884EP substitution

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SQJ884EP datasheet

 ..1. Size:178K  vishay
 sqj884ep.pdf pdf_icon

SQJ884EP

SQJ884EP www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 40 AEC-Q101 Qualifiedd RDS(on) ( ) at VGS = 10 V 0.006 100 % Rg and UIS Tested RDS(on) ( ) at VGS = 4.5 V 0.008 Material categorization ID (A) 32 For definitions of compliance please see Configuration Single www.vi... See More ⇒

 9.1. Size:170K  vishay
 sqj886ep.pdf pdf_icon

SQJ884EP

SQJ886EP www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 40 AEC-Q101 Qualifiedc RDS(on) ( ) at VGS = 10 V 0.0045 100 % Rg and UIS Tested RDS(on) ( ) at VGS = 4.5 V 0.0055 Material categorization ID (A) 60 For definitions of compliance please see Configuration Single www.... See More ⇒

Detailed specifications: SQJ840EP, SQJ844AEP, SQJ844EP, SQJ848AEP, SQJ848EP, SQJ850EP, SQJ858AEP, SQJ858EP, IRFB4115, SQJ886EP, SQJ910AEP, SQJ912AEP, SQJ912EP, SQJ940EP, SQJ941EP, SQJ942EP, SQJ951EP

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