SQJ940EP Specs and Replacement

Type Designator: SQJ940EP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 48 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9.3 nS

Cossⓘ - Output Capacitance: 118 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm

Package: POWERPAK-SO-8L

SQJ940EP substitution

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SQJ940EP datasheet

 ..1. Size:260K  vishay
 sqj940ep.pdf pdf_icon

SQJ940EP

SQJ940EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 40 V (D-S) 175 C MOSFETs FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET N-CHANNEL 1 N-CHANNEL 2 AEC-Q101 Qualifiedd VDS (V) 40 40 100 % Rg and UIS Tested RDS(on) ( ) at VGS = 10 V 0.0160 0.0064 Material categorization RDS(on) ( ) at VGS = 4.5 V 0.0188 0.0076 For definitions of compliance p... See More ⇒

 9.1. Size:258K  vishay
 sqj942ep.pdf pdf_icon

SQJ940EP

SQJ942EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 40 V (D-S) 175 C MOSFETs FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET N-CHANNEL 1 N-CHANNEL 2 AEC-Q101 Qualifiedd VDS (V) 40 40 100 % Rg and UIS Tested RDS(on) ( ) at VGS = 10 V 0.022 0.011 Material categorization RDS(on) ( ) at VGS = 4.5 V 0.026 0.013 For definitions of compliance pleas... See More ⇒

 9.2. Size:213K  vishay
 sqj946ep.pdf pdf_icon

SQJ940EP

SQJ946EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 40 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 40 AEC-Q101 qualified RDS(on) ( ) at VGS = 10 V 0.033 100 % Rg and UIS tested RDS(on) ( ) at VGS = 4.5 V 0.039 Material categorization ID (A) per leg 15 for definitions of compliance please see Configuratio... See More ⇒

 9.3. Size:155K  vishay
 sqj941ep.pdf pdf_icon

SQJ940EP

SQJ941EP www.vishay.com Vishay Siliconix Automotive Dual P-Channel 30 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) - 30 100 % Rg and UIS Tested RDS(on) ( ) at VGS = - 10 V 0.024 AEC-Q101 Qualifiedd RDS(on) ( ) at VGS = - 4.5 V 0.039 Material categorization ID (A) per leg - 8 For definitions of compliance please see Conf... See More ⇒

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Detailed specifications: SQJ850EP, SQJ858AEP, SQJ858EP, SQJ884EP, SQJ886EP, SQJ910AEP, SQJ912AEP, SQJ912EP, IRFP250N, SQJ941EP, SQJ942EP, SQJ951EP, SQJ952EP, SQJ960EP, SQJ962EP, SQJ963EP, SQJ964EP

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