SQJ980AEP Specs and Replacement
Type Designator: SQJ980AEP
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 34 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 17 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 84 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
Package: POWERPAK-SO-8L
SQJ980AEP substitution
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SQJ980AEP datasheet
sqj980aep.pdf
SQJ980AEP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 75 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 75 AEC-Q101 Qualifiedd RDS(on) ( ) at VGS = 10 V 0.050 100 % Rg and UIS Tested RDS(on) ( ) at VGS = 4.5 V 0.066 Material categorization ID (A) per leg 8 For definitions of compliance please see Configurati... See More ⇒
sqj980ep.pdf
SQJ980EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 75 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 75 Definition RDS(on) ( ) at VGS = 10 V 0.050 TrenchFET Power MOSFET RDS(on) ( ) at VGS = 4.5 V 0.070 AEC-Q101 Qualifiedd ID (A) per leg 8 100 % Rg and UIS Tested Configuration Dual Complian... See More ⇒
Detailed specifications: SQJ951EP, SQJ952EP, SQJ960EP, SQJ962EP, SQJ963EP, SQJ964EP, SQJ968EP, SQJ970EP, K3569, SQJ980EP, SQJ992EP, SQJQ402E, SQS400EN, SQS401EN, SQS404EN, SQS405EN, SQS405ENW
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