All MOSFET. SQJ980EP Datasheet

 

SQJ980EP Datasheet and Replacement


   Type Designator: SQJ980EP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 34 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: POWERPAK-SO-8L
 
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SQJ980EP Datasheet (PDF)

 ..1. Size:153K  vishay
 sqj980ep.pdf pdf_icon

SQJ980EP

SQJ980EPwww.vishay.comVishay SiliconixAutomotive Dual N-Channel 75 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 75DefinitionRDS(on) () at VGS = 10 V 0.050 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.070 AEC-Q101 QualifieddID (A) per leg 8 100 % Rg and UIS TestedConfiguration Dual Complian

 8.1. Size:734K  vishay
 sqj980aep.pdf pdf_icon

SQJ980EP

SQJ980AEPwww.vishay.comVishay SiliconixAutomotive Dual N-Channel 75 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 75 AEC-Q101 QualifieddRDS(on) () at VGS = 10 V 0.050 100 % Rg and UIS TestedRDS(on) () at VGS = 4.5 V 0.066 Material categorization:ID (A) per leg 8For definitions of compliance please see Configurati

Datasheet: SQJ952EP , SQJ960EP , SQJ962EP , SQJ963EP , SQJ964EP , SQJ968EP , SQJ970EP , SQJ980AEP , 8205A , SQJ992EP , SQJQ402E , SQS400EN , SQS401EN , SQS404EN , SQS405EN , SQS405ENW , SQS420EN .

History: IXFV20N80PS

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