All MOSFET. SQJ992EP Datasheet

 

SQJ992EP Datasheet and Replacement


   Type Designator: SQJ992EP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 34 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 66 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0562 Ohm
   Package: POWERPAK-SO-8L
 

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SQJ992EP Datasheet (PDF)

 ..1. Size:223K  vishay
 sqj992ep.pdf pdf_icon

SQJ992EP

SQJ992EPwww.vishay.comVishay SiliconixAutomotive Dual N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 AEC-Q101 qualifiedRDS(on) () at VGS = 10 V 0.0562 100 % Rg and UIS testedRDS(on) () at VGS = 4.5 V 0.0745 Material categorization: ID (A) per leg 8for definitions of compliance please see Configuration D

 9.1. Size:366K  vishay
 sqj990ep.pdf pdf_icon

SQJ992EP

SQJ990EPwww.vishay.comVishay SiliconixAutomotive Dual N-Channel 100 V (D-S) 175 C MOSFETsFEATURESSPowerPAK SO-8L Dual Asymmetric TrenchFET power MOSFET AEC-Q101 qualifiedD1 100 % Rg and UIS tested Optimized for synchronous buck applicationsD2 Material categorization: 1for definitions of compliance please seeS12www.vishay.com/doc?99912G1

Datasheet: SQJ960EP , SQJ962EP , SQJ963EP , SQJ964EP , SQJ968EP , SQJ970EP , SQJ980AEP , SQJ980EP , 2SK3568 , SQJQ402E , SQS400EN , SQS401EN , SQS404EN , SQS405EN , SQS405ENW , SQS420EN , SQS423EN .

History: SSM20P02GH

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