SQJ992EP Specs and Replacement
Type Designator: SQJ992EP
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 34 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 66 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0562 Ohm
Package: POWERPAK-SO-8L
SQJ992EP substitution
- MOSFET ⓘ Cross-Reference Search
SQJ992EP datasheet
sqj992ep.pdf
SQJ992EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 60 AEC-Q101 qualified RDS(on) ( ) at VGS = 10 V 0.0562 100 % Rg and UIS tested RDS(on) ( ) at VGS = 4.5 V 0.0745 Material categorization ID (A) per leg 8 for definitions of compliance please see Configuration D... See More ⇒
sqj990ep.pdf
SQJ990EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 100 V (D-S) 175 C MOSFETs FEATURESS PowerPAK SO-8L Dual Asymmetric TrenchFET power MOSFET AEC-Q101 qualified D1 100 % Rg and UIS tested Optimized for synchronous buck applications D2 Material categorization 1 for definitions of compliance please see S1 2 www.vishay.com/doc?99912 G1 ... See More ⇒
Detailed specifications: SQJ960EP, SQJ962EP, SQJ963EP, SQJ964EP, SQJ968EP, SQJ970EP, SQJ980AEP, SQJ980EP, 4435, SQJQ402E, SQS400EN, SQS401EN, SQS404EN, SQS405EN, SQS405ENW, SQS420EN, SQS423EN
Keywords - SQJ992EP MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
