SQS423EN Datasheet and Replacement
Type Designator: SQS423EN
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 62.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 16 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 43 nS
Cossⓘ - Output Capacitance: 335 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm
Package: POWERPAK1212-8
SQS423EN substitution
SQS423EN Datasheet (PDF)
sqs423en.pdf
SQS423ENwww.vishay.comVishay SiliconixAutomotive P-Channel 30 V (D-S) 175 C MOSFETFEATURES TrenchFET Power MOSFETPRODUCT SUMMARY AEC-Q101 QualifieddVDS (V) - 30 100 % Rg and UIS TestedRDS(on) () at VGS = - 10 V 0.021 Material categorization:RDS(on) () at VGS = - 4.5 V 0.060For definitions of compliance please see ID (A) - 16www.vishay.com/d
sqs420en.pdf
SQS420ENwww.vishay.comVishay SiliconixAutomotive N-Channel 20 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 20DefinitionRDS(on) () at VGS = 4.5 V 0.0280 TrenchFET Power MOSFETRDS(on) () at VGS = 2.5 V 0.0320 AEC-Q101 QualifieddRDS(on) () at VGS = 1.8 V 0.0380 100 % Rg and UIS TestedID (A) 8
Datasheet: SQJ992EP , SQJQ402E , SQS400EN , SQS401EN , SQS404EN , SQS405EN , SQS405ENW , SQS420EN , IRF1010E , SQS460EN , SQS462EN , SQS464EEN , SQS466EEN , SQS482EN , SQS484EN , SQS840EN , SQS850EN .
History: CEM3254 | AON7262E | NP60N04VDK | AON7518 | VBZL150N03 | IXTA10P50P
Keywords - SQS423EN MOSFET datasheet
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: CEM3254 | AON7262E | NP60N04VDK | AON7518 | VBZL150N03 | IXTA10P50P
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