All MOSFET. SQS423EN Datasheet

 

SQS423EN Datasheet and Replacement


   Type Designator: SQS423EN
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 62.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 16 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 43 nS
   Cossⓘ - Output Capacitance: 335 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm
   Package: POWERPAK1212-8
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SQS423EN Datasheet (PDF)

 ..1. Size:552K  vishay
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SQS423EN

SQS423ENwww.vishay.comVishay SiliconixAutomotive P-Channel 30 V (D-S) 175 C MOSFETFEATURES TrenchFET Power MOSFETPRODUCT SUMMARY AEC-Q101 QualifieddVDS (V) - 30 100 % Rg and UIS TestedRDS(on) () at VGS = - 10 V 0.021 Material categorization:RDS(on) () at VGS = - 4.5 V 0.060For definitions of compliance please see ID (A) - 16www.vishay.com/d

 9.1. Size:556K  vishay
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SQS423EN

SQS420ENwww.vishay.comVishay SiliconixAutomotive N-Channel 20 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 20DefinitionRDS(on) () at VGS = 4.5 V 0.0280 TrenchFET Power MOSFETRDS(on) () at VGS = 2.5 V 0.0320 AEC-Q101 QualifieddRDS(on) () at VGS = 1.8 V 0.0380 100 % Rg and UIS TestedID (A) 8

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: SM6A12NSFP | FCPF7N60YDTU

Keywords - SQS423EN MOSFET datasheet

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