All MOSFET. SQS423EN Datasheet

 

SQS423EN MOSFET. Datasheet pdf. Equivalent

Type Designator: SQS423EN

SMD Transistor Code: Q006

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 62.5 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V

Maximum Drain Current |Id|: 16 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 17 nC

Rise Time (tr): 43 nS

Drain-Source Capacitance (Cd): 335 pF

Maximum Drain-Source On-State Resistance (Rds): 0.021 Ohm

Package: PowerPAK1212-8

SQS423EN Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SQS423EN Datasheet (PDF)

1.1. sqs423en.pdf Size:552K _update

SQS423EN
SQS423EN

SQS423EN www.vishay.com Vishay Siliconix Automotive P-Channel 30 V (D-S) 175 °C MOSFET FEATURES • TrenchFET® Power MOSFET PRODUCT SUMMARY • AEC-Q101 Qualifiedd VDS (V) - 30 • 100 % Rg and UIS Tested RDS(on) () at VGS = - 10 V 0.021 • Material categorization: RDS(on) () at VGS = - 4.5 V 0.060 For definitions of compliance please see ID (A) - 16 www.vishay.com/d

5.1. sqs420en.pdf Size:556K _update

SQS423EN
SQS423EN

SQS420EN www.vishay.com Vishay Siliconix Automotive N-Channel 20 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) 20 Definition RDS(on) () at VGS = 4.5 V 0.0280 • TrenchFET® Power MOSFET RDS(on) () at VGS = 2.5 V 0.0320 • AEC-Q101 Qualifiedd RDS(on) () at VGS = 1.8 V 0.0380 • 100 % Rg and UIS Tested ID (A) 8 •

Datasheet: SQJ992EP , SQJQ402E , SQS400EN , SQS401EN , SQS404EN , SQS405EN , SQS405ENW , SQS420EN , J310 , SQS460EN , SQS462EN , SQS464EEN , SQS466EEN , SQS482EN , SQS484EN , SQS840EN , SQS850EN .

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