SQS423EN MOSFET. Datasheet pdf. Equivalent
Type Designator: SQS423EN
SMD Transistor Code: Q006
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 62.5 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V
Maximum Drain Current |Id|: 16 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 17 nC
Rise Time (tr): 43 nS
Drain-Source Capacitance (Cd): 335 pF
Maximum Drain-Source On-State Resistance (Rds): 0.021 Ohm
Package: PowerPAK1212-8
SQS423EN Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SQS423EN Datasheet (PDF)
1.1. sqs423en.pdf 
Size:552K _update
SQS423EN www.vishay.com Vishay Siliconix Automotive P-Channel 30 V (D-S) 175 °C MOSFET FEATURES • TrenchFET® Power MOSFET PRODUCT SUMMARY • AEC-Q101 Qualifiedd VDS (V) - 30 • 100 % Rg and UIS Tested RDS(on) () at VGS = - 10 V 0.021 • Material categorization: RDS(on) () at VGS = - 4.5 V 0.060 For definitions of compliance please see ID (A) - 16 www.vishay.com/d
5.1. sqs420en.pdf Size:556K _update
SQS420EN www.vishay.com Vishay Siliconix Automotive N-Channel 20 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) 20 Definition RDS(on) () at VGS = 4.5 V 0.0280 • TrenchFET® Power MOSFET RDS(on) () at VGS = 2.5 V 0.0320 • AEC-Q101 Qualifiedd RDS(on) () at VGS = 1.8 V 0.0380 • 100 % Rg and UIS Tested ID (A) 8 •
Datasheet: PHB95NQ04LT , PHB96NQ03LT , PHD108NQ03LT , PHD14NQ20T , PHD16N03LT , PHD16N03T , PHD18NQ10T , PHD21N06LT , IRFP250 , PHD23NQ10T , PHD34NQ10T , PHD36N03LT , PHD37N06LT , PHD44N06LT , PHD50N06LT , PHD66NQ03LT , PHD77NQ03T .
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