All MOSFET. SQS464EEN Datasheet

 

SQS464EEN MOSFET. Datasheet pdf. Equivalent

Type Designator: SQS464EEN

Marking Code: Q010

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 33 W

Maximum Drain-Source Voltage |Vds|: 40 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V

Maximum Drain Current |Id|: 8 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 14 nC

Rise Time (tr): 11 nS

Drain-Source Capacitance (Cd): 120 pF

Maximum Drain-Source On-State Resistance (Rds): 0.032 Ohm

Package: PowerPAK1212-8

SQS464EEN Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SQS464EEN Datasheet (PDF)

1.1. sqs464een.pdf Size:558K _update

SQS464EEN
SQS464EEN

SQS464EEN www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) 40 Definition RDS(on) () at VGS = 10 V 0.032 • Typical ESD Protection 800 V RDS(on) () at VGS = 4.5 V 0.046 • TrenchFET® Power MOSFET ID (A) 8 • AEC-Q101 Qualifiedd Configuration Single • 100 % Rg an

5.1. sqs466een.pdf Size:558K _update

SQS464EEN
SQS464EEN

SQS466EEN www.vishay.com Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition RDS(on) () at VGS = 10 V 0.048 • Typical ESD Protection 800 Vg RDS(on) () at VGS = 4.5 V 0.074 • TrenchFET® Power MOSFET ID (A) 8 • AEC-Q101 Qualifiedd Configuration Single • 100 % Rg a

5.2. sqs462en.pdf Size:560K _update

SQS464EEN
SQS464EEN

SQS462EN www.vishay.com Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY • TrenchFET® Power MOSFET VDS (V) 60 • AEC-Q101 Qualified RDS(on) () at VGS = 10 V 0.063 • 100 % Rg and UIS Tested RDS(on) () at VGS = 4.5 V 0.082 • Material categorization: ID (A) 8 For definitions of compliance please see Configuration Single www.

 5.3. sqs460en.pdf Size:561K _update

SQS464EEN
SQS464EEN

SQS460EN www.vishay.com Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY • TrenchFET® Power MOSFET VDS (V) 60 • AEC-Q101 Qualified RDS(on) () at VGS = 10 V 0.036 • 100 % Rg and UIS Tested RDS(on) () at VGS = 4.5 V 0.048 • Material categorization: ID (A) 8 For definitions of compliance please see Configuration Single www.vish

Datasheet: CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

 

 
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