SQS850EN Specs and Replacement

Type Designator: SQS850EN

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 33 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9.6 nS

Cossⓘ - Output Capacitance: 132 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0215 Ohm

Package: POWERPAK1212-8

SQS850EN substitution

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SQS850EN datasheet

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SQS850EN

SQS850EN www.vishay.com Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 60 AEC-Q101 qualified RDS(on) ( ) at VGS = 10 V 0.0215 100 % Rg and UIS tested RDS(on) ( ) at VGS = 4.5 V 0.0261 Material categorization ID (A) 12 for definitions of compliance please see Configuration Single www.vis... See More ⇒

Detailed specifications: SQS423EN, SQS460EN, SQS462EN, SQS464EEN, SQS466EEN, SQS482EN, SQS484EN, SQS840EN, IRFP450, SQV120N10-3M8, SQV90N06-05, SRADM1002, SRADM1003, SRADM1004, SRADM1005, SRADM1006, SRADM1007

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.