SQS850EN Datasheet and Replacement
Type Designator: SQS850EN
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 33 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 9.6 nS
Cossⓘ - Output Capacitance: 132 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0215 Ohm
Package: POWERPAK1212-8
SQS850EN substitution
SQS850EN Datasheet (PDF)
sqs850en.pdf

SQS850ENwww.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 AEC-Q101 qualifiedRDS(on) () at VGS = 10 V 0.0215 100 % Rg and UIS testedRDS(on) () at VGS = 4.5 V 0.0261 Material categorization:ID (A) 12for definitions of compliance please seeConfiguration Singlewww.vis
Datasheet: SQS423EN , SQS460EN , SQS462EN , SQS464EEN , SQS466EEN , SQS482EN , SQS484EN , SQS840EN , IRF1407 , SQV120N10-3M8 , SQV90N06-05 , SRADM1002 , SRADM1003 , SRADM1004 , SRADM1005 , SRADM1006 , SRADM1007 .
History: UPA2732UT1A | PHD78NQ03L | HD830 | FTK4004 | STP12N65M5 | IRFPC32 | HM2309APR
Keywords - SQS850EN MOSFET datasheet
SQS850EN cross reference
SQS850EN equivalent finder
SQS850EN lookup
SQS850EN substitution
SQS850EN replacement
History: UPA2732UT1A | PHD78NQ03L | HD830 | FTK4004 | STP12N65M5 | IRFPC32 | HM2309APR



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