SQS850EN MOSFET. Datasheet pdf. Equivalent
Type Designator: SQS850EN
SMD Transistor Code: Q019
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 33 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V
Maximum Drain Current |Id|: 12 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 27.4 nC
Rise Time (tr): 9.6 nS
Drain-Source Capacitance (Cd): 132 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0215 Ohm
Package: PowerPAK1212-8
SQS850EN Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SQS850EN Datasheet (PDF)
1.1. sqs850en.pdf 
Size:616K _update
SQS850EN www.vishay.com Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY • TrenchFET® power MOSFET VDS (V) 60 • AEC-Q101 qualified RDS(on) (Ω) at VGS = 10 V 0.0215 • 100 % Rg and UIS tested RDS(on) (Ω) at VGS = 4.5 V 0.0261 • Material categorization: ID (A) 12 for definitions of compliance please see Configuration Single www.vis
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