All MOSFET. SQS850EN Datasheet

 

SQS850EN MOSFET. Datasheet pdf. Equivalent

Type Designator: SQS850EN

SMD Transistor Code: Q019

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 33 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V

Maximum Drain Current |Id|: 12 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 27.4 nC

Rise Time (tr): 9.6 nS

Drain-Source Capacitance (Cd): 132 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0215 Ohm

Package: PowerPAK1212-8

SQS850EN Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SQS850EN Datasheet (PDF)

1.1. sqs850en.pdf Size:616K _update

SQS850EN SQS850EN

SQS850EN www.vishay.com Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY • TrenchFET® power MOSFET VDS (V) 60 • AEC-Q101 qualified RDS(on) (Ω) at VGS = 10 V 0.0215 • 100 % Rg and UIS tested RDS(on) (Ω) at VGS = 4.5 V 0.0261 • Material categorization: ID (A) 12 for definitions of compliance please see Configuration Single www.vis

Datasheet: SQS423EN , SQS460EN , SQS462EN , SQS464EEN , SQS466EEN , SQS482EN , SQS484EN , SQS840EN , IRFP4232 , SQV120N10-3M8 , SQV90N06-05 , SRADM1002 , SRADM1003 , SRADM1004 , SRADM1005 , SRADM1006 , SRADM1007 .

Back to Top