SRC4N65DTR Datasheet and Replacement
Type Designator: SRC4N65DTR
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 52 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 11.8 nS
Cossⓘ - Output Capacitance: 298 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.935 Ohm
Package: TO-252
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SRC4N65DTR Datasheet (PDF)
src4n65.pdf

Datasheet 4A, 650V, Super Junction N-Channel Power MOSFET SRC4N65General Description Symbol The Sanrise SRC4N65 is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance and fast switching time, making it especially suitable forapplications which require superior power density and outstanding effic
Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , IRFZ48N , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .
History: AP4230GM-HF | G5N50T | NTR4503NT1 | NTP30N06 | STN18D20 | OM6101ST | SIHFZ48
Keywords - SRC4N65DTR MOSFET datasheet
SRC4N65DTR cross reference
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History: AP4230GM-HF | G5N50T | NTR4503NT1 | NTP30N06 | STN18D20 | OM6101ST | SIHFZ48



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