SRC4N65DTR Specs and Replacement

Type Designator: SRC4N65DTR

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 52 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11.8 nS

Cossⓘ - Output Capacitance: 298 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.935 Ohm

Package: TO-252

SRC4N65DTR substitution

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SRC4N65DTR datasheet

 7.1. Size:511K  sanrise-tech
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SRC4N65DTR

Datasheet 4A, 650V, Super Junction N-Channel Power MOSFET SRC4N65 General Description Symbol The Sanrise SRC4N65 is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance and fast switching time, making it especially suitable for applications which require superior power density and outstanding effic... See More ⇒

Detailed specifications: SRADM1004, SRADM1005, SRADM1006, SRADM1007, SRADM1008, SRC11N65TC, SRC11N65TF, SRC4N65D1, 18N50, SRC4N65TC, SRC4N65TF, SRC7N65D1, SRC7N65DTR, SRC7N65TC, SRC7N65TF, SRK7002LT1G, SRM10N60TF

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