All MOSFET. IXTH12N50MB Datasheet

 

IXTH12N50MB Datasheet and Replacement


   Type Designator: IXTH12N50MB
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: TO247
 

 IXTH12N50MB substitution

   - MOSFET ⓘ Cross-Reference Search

 

IXTH12N50MB Datasheet (PDF)

 ..1. Size:681K  1
 ixth12n45ma ixth12n45mb ixth12n50ma ixth12n50mb ixth15n35ma ixth15n35mb ixth15n40ma ixth15n40mb ixtz42n20mb ixtz67n10ma ixtz67n10mb.pdf pdf_icon

IXTH12N50MB

 5.1. Size:62K  ixys
 ixth12n50a ixtm12n50a.pdf pdf_icon

IXTH12N50MB

VDSS ID25 RDS(on)StandardIXTH 12 N50A 500 V 12 A 0.4 Power MOSFETIXTM 12 N50A 500 V 12 A 0.4 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 AD (IXTH)VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 M 500 VD (TAB)VGS Continuous 20 VVGSM Transient 30 VID25 TC = 25C12 AIDM TC

 5.2. Size:65K  ixys
 ixth12n45 ixth12n45a ixth12n50 ixtm12n45 ixtm12n45a ixtm12n50.pdf pdf_icon

IXTH12N50MB

 7.1. Size:175K  ixys
 ixtt12n150 ixth12n150.pdf pdf_icon

IXTH12N50MB

High Voltage VDSS = 1500VIXTT12N150ID25 = 12APower MOSFETIXTH12N150 RDS(on) 2.2 N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTO-268 (IXTT)GSymbol Test Conditions Maximum RatingsSVDSS TJ = 25C to 150C 1500 VD (Tab)VDGR TJ = 25C to 150C, RGS = 1M 1500 VVGSS Continuous 30 VTO-247 (IXTH)VG

SHOW MORE

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRF530 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

Keywords - IXTH12N50MB MOSFET datasheet

 IXTH12N50MB cross reference
 IXTH12N50MB equivalent finder
 IXTH12N50MB lookup
 IXTH12N50MB substitution
 IXTH12N50MB replacement

 

 
Back to Top

 


 
.