SS05N70 Specs and Replacement

Type Designator: SS05N70

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 28 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5.9 nS

Cossⓘ - Output Capacitance: 18 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm

Package: TO-251

SS05N70 substitution

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SS05N70 datasheet

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SS05N70

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 700V 700V CoolMOS C6 Power Transistor SS05N70 Data Sheet ev. .0 in l Industrial & Multimarket 700V CoolMOS C6 Power Transistor SS05N70 IPAK SL 1 Descripti n t b CoolMOS is a revolutionary technology for high voltage power MOSFETs designed according to the superjunction (S ) principle and pioneered by Infineo... See More ⇒

Detailed specifications: SRM6N60TF, SRM6N70, SRM7N60, SRM7N65, SRM7N65D1-E1, SRM7N65DTR-E1, SRM7N65TF-E1, SRM7N65TC-E1, 20N60, SS07N70, SSD80N03, SSFM2506L, SSFM2508, ST1002, ST1004SRG, ST1005SRG, ST10E4

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.