All MOSFET. SS05N70 Datasheet

 

SS05N70 Datasheet and Replacement


   Type Designator: SS05N70
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 28 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id| ⓘ - Maximum Drain Current: 3.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 10.5 nC
   tr ⓘ - Rise Time: 5.9 nS
   Cossⓘ - Output Capacitance: 18 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: TO-251
 

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SS05N70 Datasheet (PDF)

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SS05N70

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 700V700V CoolMOS C6 Power TransistorSS05N70Data Sheet ev. .0 in lIndustrial & Multimarket700V CoolMOS C6 Power TransistorSS05N70IPAK SL1 Descriptint bCoolMOS is a revolutionary technology for high voltage powerMOSFETs designed according to the superjunction (S ) principle andpioneered by Infineo

Datasheet: SRM6N60TF , SRM6N70 , SRM7N60 , SRM7N65 , SRM7N65D1-E1 , SRM7N65DTR-E1 , SRM7N65TF-E1 , SRM7N65TC-E1 , 20N60 , SS07N70 , SSD80N03 , SSFM2506L , SSFM2508 , ST1002 , ST1004SRG , ST1005SRG , ST10E4 .

History: SWF8N65DB | NP34N055HHE

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