SSD80N03 Specs and Replacement

Type Designator: SSD80N03

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 59 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 267 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm

Package: TO-252

SSD80N03 substitution

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SSD80N03 datasheet

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SSD80N03

SSD80N03 80A , 30V , RDS(ON) 5.5m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free DESCRIPTION TO-252(D-Pack) The SSD80N03 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter... See More ⇒

Detailed specifications: SRM7N60, SRM7N65, SRM7N65D1-E1, SRM7N65DTR-E1, SRM7N65TF-E1, SRM7N65TC-E1, SS05N70, SS07N70, IRF540, SSFM2506L, SSFM2508, ST1002, ST1004SRG, ST1005SRG, ST10E4, ST12N10D, ST13P10

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