SSD80N03 Datasheet and Replacement
Type Designator: SSD80N03
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 59 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 267 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
Package: TO-252
SSD80N03 substitution
SSD80N03 Datasheet (PDF)
ssd80n03.pdf

SSD80N03 80A , 30V , RDS(ON) 5.5m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free DESCRIPTION TO-252(D-Pack) The SSD80N03 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter
Datasheet: SRM7N60 , SRM7N65 , SRM7N65D1-E1 , SRM7N65DTR-E1 , SRM7N65TF-E1 , SRM7N65TC-E1 , SS05N70 , SS07N70 , IRF540N , SSFM2506L , SSFM2508 , ST1002 , ST1004SRG , ST1005SRG , ST10E4 , ST12N10D , ST13P10 .
History: KNB3204A | SWF4N80D | IRFL1006PBF | STH130N10F3-2 | STP3401 | MTB36N06V | KIA4N65H-252
Keywords - SSD80N03 MOSFET datasheet
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History: KNB3204A | SWF4N80D | IRFL1006PBF | STH130N10F3-2 | STP3401 | MTB36N06V | KIA4N65H-252



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