ST10E4 Specs and Replacement

Type Designator: ST10E4

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 43 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm

Package: SOT-23

ST10E4 substitution

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ST10E4 datasheet

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ST10E4

ST10E4 N Channel Enhancement Mode MOSFET 3.0A DESCRIPTION The ST10E4 is the N-Channel logic enhancement mode power field effect transistor is produce using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These device are particularly suited for low voltage application such as cellular phone and notebo... See More ⇒

Detailed specifications: SS05N70, SS07N70, SSD80N03, SSFM2506L, SSFM2508, ST1002, ST1004SRG, ST1005SRG, IRLZ44N, ST12N10D, ST13P10, ST2300, ST2300SRG, ST2301A, ST2302, ST2303SRG, ST2304

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