All MOSFET. ST13P10 Datasheet

 

ST13P10 Datasheet and Replacement


   Type Designator: ST13P10
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 66 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 13 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 58 nS
   Cossⓘ - Output Capacitance: 260 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
   Package: TO-251 TO-252
 

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ST13P10 Datasheet (PDF)

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ST13P10

ST13P10 P Channel Enhancement Mode MOSFET -13.0A DESCRIPTION ST13P10 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The ST13P10 has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been

Datasheet: SSD80N03 , SSFM2506L , SSFM2508 , ST1002 , ST1004SRG , ST1005SRG , ST10E4 , ST12N10D , IRF630 , ST2300 , ST2300SRG , ST2301A , ST2302 , ST2303SRG , ST2304 , ST2304SRG , ST2305 .

History: STD3NK80Z | AUIRLR3915

Keywords - ST13P10 MOSFET datasheet

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