ST13P10 Specs and Replacement

Type Designator: ST13P10

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 66 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 13 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 58 nS

Cossⓘ - Output Capacitance: 260 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm

Package: TO-251 TO-252

ST13P10 substitution

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ST13P10 datasheet

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ST13P10

ST13P10 P Channel Enhancement Mode MOSFET -13.0A DESCRIPTION ST13P10 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The ST13P10 has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been ... See More ⇒

Detailed specifications: SSD80N03, SSFM2506L, SSFM2508, ST1002, ST1004SRG, ST1005SRG, ST10E4, ST12N10D, IRF640N, ST2300, ST2300SRG, ST2301A, ST2302, ST2303SRG, ST2304, ST2304SRG, ST2305

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