All MOSFET. ST36N10D Datasheet

 

ST36N10D MOSFET. Datasheet pdf. Equivalent


   Type Designator: ST36N10D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 36 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 61 nC
   trⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 270 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.048 Ohm
   Package: TO-251 TO-252

 ST36N10D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ST36N10D Datasheet (PDF)

 ..1. Size:1277K  stansontech
 st36n10d.pdf

ST36N10D ST36N10D

ST36N10D N Channel Enhancement Mode MOSFET 36.0A DESCRIPTION STN36N10D is used trench technology to provide excellent RDS(on) and gate charge. Those devices are suitable for use as load switch or in PWM applications. PIN CONFIGURATION (D-PAK) FEATURE 100V/20.0A, RDS(ON) = 40m (Typ.) TO-252 TO-251 @VGS = 10V 100V/20.0A, RDS(ON) = 42m @VGS = 4.5V Super high densi

 9.1. Size:497K  stansontech
 st36n06.pdf

ST36N10D ST36N10D

ST36N06 N Channel Enhancement Mode MOSFET 36.0A DESCRIPTION ST36N06 is used trench technology to provide excellent RDS(on) and gate charge. Those devices are suitable for use as load switch or in PWM applications. PIN CONFIGURATION FEATURE TO220-3L 60V/20.0A, RDS(ON) = 30m (Typ.) @VGS = 10V 60V/20.0A, RDS(ON) = 45m @VGS = 4.5V Super high density cell design f

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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