ST36N10D Specs and Replacement
Type Designator: ST36N10D
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 36 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 19 nS
Cossⓘ - Output Capacitance: 270 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.048 Ohm
ST36N10D substitution
- MOSFET ⓘ Cross-Reference Search
ST36N10D datasheet
st36n10d.pdf
ST36N10D N Channel Enhancement Mode MOSFET 36.0A DESCRIPTION STN36N10D is used trench technology to provide excellent RDS(on) and gate charge. Those devices are suitable for use as load switch or in PWM applications. PIN CONFIGURATION (D-PAK) FEATURE 100V/20.0A, RDS(ON) = 40m (Typ.) TO-252 TO-251 @VGS = 10V 100V/20.0A, RDS(ON) = 42m @VGS = 4.5V Super high densi... See More ⇒
st36n06.pdf
ST36N06 N Channel Enhancement Mode MOSFET 36.0A DESCRIPTION ST36N06 is used trench technology to provide excellent RDS(on) and gate charge. Those devices are suitable for use as load switch or in PWM applications. PIN CONFIGURATION FEATURE TO220-3L 60V/20.0A, RDS(ON) = 30m (Typ.) @VGS = 10V 60V/20.0A, RDS(ON) = 45m @VGS = 4.5V Super high density cell design f... See More ⇒
Detailed specifications: ST3406SRG, ST3407S23RG, ST3407SRG, ST3413A, ST3414A, ST3421SRG, ST3422A, ST36N06, 13N50, ST47P06D, ST75N75, ST9435A, ST9435GP, SUB65P04-15, SUB75P03-07, SUB85N10-10, SUD06N10-225L
Keywords - ST36N10D MOSFET specs
ST36N10D cross reference
ST36N10D equivalent finder
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ST36N10D substitution
ST36N10D replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: 2SK1178 | IRF7324D1PBF | 2SK2596 | 4N70KG-TF3-T | IRF7309PBF-1 | U55NF06 | IAUC100N04S6L025
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