ST36N10D PDF and Equivalents Search

 

ST36N10D Specs and Replacement

Type Designator: ST36N10D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 83 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 36 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 270 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.048 Ohm

Package: TO-251 TO-252

ST36N10D substitution

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ST36N10D datasheet

 ..1. Size:1277K  stansontech
st36n10d.pdf pdf_icon

ST36N10D

ST36N10D N Channel Enhancement Mode MOSFET 36.0A DESCRIPTION STN36N10D is used trench technology to provide excellent RDS(on) and gate charge. Those devices are suitable for use as load switch or in PWM applications. PIN CONFIGURATION (D-PAK) FEATURE 100V/20.0A, RDS(ON) = 40m (Typ.) TO-252 TO-251 @VGS = 10V 100V/20.0A, RDS(ON) = 42m @VGS = 4.5V Super high densi... See More ⇒

 9.1. Size:497K  stansontech
st36n06.pdf pdf_icon

ST36N10D

ST36N06 N Channel Enhancement Mode MOSFET 36.0A DESCRIPTION ST36N06 is used trench technology to provide excellent RDS(on) and gate charge. Those devices are suitable for use as load switch or in PWM applications. PIN CONFIGURATION FEATURE TO220-3L 60V/20.0A, RDS(ON) = 30m (Typ.) @VGS = 10V 60V/20.0A, RDS(ON) = 45m @VGS = 4.5V Super high density cell design f... See More ⇒

Detailed specifications: ST3406SRG, ST3407S23RG, ST3407SRG, ST3413A, ST3414A, ST3421SRG, ST3422A, ST36N06, 13N50, ST47P06D, ST75N75, ST9435A, ST9435GP, SUB65P04-15, SUB75P03-07, SUB85N10-10, SUD06N10-225L

Keywords - ST36N10D MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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