ST47P06D PDF and Equivalents Search

 

ST47P06D Specs and Replacement

Type Designator: ST47P06D

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 160 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 47 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 460 nS

Cossⓘ - Output Capacitance: 1300 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.029 Ohm

Package: TO-220

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ST47P06D datasheet

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ST47P06D

ST47P06D P Channel Enhancement Mode MOSFET -47.0A DESCRIPTION ST47P06D is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These device is particularly suited for low voltage application, notebook computer power... See More ⇒

Detailed specifications: ST3407S23RG, ST3407SRG, ST3413A, ST3414A, ST3421SRG, ST3422A, ST36N06, ST36N10D, AON7410, ST75N75, ST9435A, ST9435GP, SUB65P04-15, SUB75P03-07, SUB85N10-10, SUD06N10-225L, SUD08P06-155L

Keywords - ST47P06D MOSFET specs

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