ST9435GP PDF and Equivalents Search

 

ST9435GP Specs and Replacement

Type Designator: ST9435GP

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 62.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 46 nS

Cossⓘ - Output Capacitance: 80 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.057 Ohm

Package: TO-220

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ST9435GP datasheet

 ..1. Size:359K  stansontech
 st9435gp.pdf pdf_icon

ST9435GP

ST9435GP P Channel Enhancement Mode MOSFET -15.0A DESCRIPTION ST9435GP is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These device is particularly suited for low voltage application, notebook computer power... See More ⇒

 8.1. Size:396K  stansontech
 st9435a.pdf pdf_icon

ST9435GP

ST9435A P Channel Enhancement Mode MOSFET - 5.6A DESCRIPTION ST9435A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as battery pack, note... See More ⇒

Detailed specifications: ST3414A, ST3421SRG, ST3422A, ST36N06, ST36N10D, ST47P06D, ST75N75, ST9435A, IRF1010E, SUB65P04-15, SUB75P03-07, SUB85N10-10, SUD06N10-225L, SUD08P06-155L, SUD09P10-195, SUD15N15-95, SUD17N25-165

Keywords - ST9435GP MOSFET specs

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