All MOSFET. ST9435GP Datasheet

 

ST9435GP Datasheet and Replacement


   Type Designator: ST9435GP
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 62.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 46 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.057 Ohm
   Package: TO-220
 

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ST9435GP Datasheet (PDF)

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ST9435GP

ST9435GP P Channel Enhancement Mode MOSFET -15.0A DESCRIPTION ST9435GP is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These device is particularly suited for low voltage application, notebook computer power

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ST9435GP

ST9435A P Channel Enhancement Mode MOSFET - 5.6A DESCRIPTION ST9435A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as battery pack, note

Datasheet: ST3414A , ST3421SRG , ST3422A , ST36N06 , ST36N10D , ST47P06D , ST75N75 , ST9435A , IRF1010E , SUB65P04-15 , SUB75P03-07 , SUB85N10-10 , SUD06N10-225L , SUD08P06-155L , SUD09P10-195 , SUD15N15-95 , SUD17N25-165 .

History: STB100N6F7 | SWU12N70D | RUH120N140S | SWT47N65K2 | FDS8858CZ | SWU12N65D | 4N65L-TF3T-T

Keywords - ST9435GP MOSFET datasheet

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