All MOSFET. SUD17N25-165 Datasheet

 

SUD17N25-165 Datasheet and Replacement


   Type Designator: SUD17N25-165
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 136 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 17 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 130 nS
   Cossⓘ - Output Capacitance: 160 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.165 Ohm
   Package: TO-252
 

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SUD17N25-165 Datasheet (PDF)

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SUD17N25-165

SUD17N25-165www.vishay.comVishay SiliconixN-Channel 250-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) RDS(on) ()ID (A) 175 C junction temperature250 0.165 at VGS = 10 V 17 Material categorization:for definitions of compliance please see www.vishay.com/doc?99912 TO-252TODrain connected to tabDGSDN-Channel MO

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SUD17N25-165

New ProductSUD17N25-165Vishay SiliconixN-Channel 250-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A) 175 C Junction Temperature0.165 at VGS = 10 V 250 17RoHSCOMPLIANT DTO-252GDrain Connected to TabG D STop ViewSOrdering Information: SUD17N25-165-E3 (Lead (Pb)-free)N-Channel MOSFETABSOLUTE MAX

Datasheet: ST9435GP , SUB65P04-15 , SUB75P03-07 , SUB85N10-10 , SUD06N10-225L , SUD08P06-155L , SUD09P10-195 , SUD15N15-95 , IRF1407 , SUD19N20-90 , SUD19P06-60 , SUD19P06-60L , SUD20N10-66L , SUD20P15-306 , SUD23N06-31 , SUD23N06-31L , SUD25N04-25 .

History: PE614DX | APT39F60J | DMP3010LK3 | 7N65G-T2Q-T | FHA86N30A | IPD30N03S2L-20 | MTN3484J3

Keywords - SUD17N25-165 MOSFET datasheet

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