SUD17N25-165 Specs and Replacement
Type Designator: SUD17N25-165
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 136 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 17 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 130 nS
Cossⓘ - Output Capacitance: 160 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.165 Ohm
Package: TO-252
SUD17N25-165 substitution
- MOSFET ⓘ Cross-Reference Search
SUD17N25-165 datasheet
sud17n25-165.pdf
SUD17N25-165 www.vishay.com Vishay Siliconix N-Channel 250-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C junction temperature 250 0.165 at VGS = 10 V 17 Material categorization for definitions of compliance please see www.vishay.com/doc?99912 TO-252 TO Drain connected to tab D G S D N-Channel MO... See More ⇒
sud17n25.pdf
New Product SUD17N25-165 Vishay Siliconix N-Channel 250-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( )ID (A) 175 C Junction Temperature 0.165 at VGS = 10 V 250 17 RoHS COMPLIANT D TO-252 G Drain Connected to Tab G D S Top View S Ordering Information SUD17N25-165-E3 (Lead (Pb)-free) N-Channel MOSFET ABSOLUTE MAX... See More ⇒
Detailed specifications: ST9435GP, SUB65P04-15, SUB75P03-07, SUB85N10-10, SUD06N10-225L, SUD08P06-155L, SUD09P10-195, SUD15N15-95, IRFP450, SUD19N20-90, SUD19P06-60, SUD19P06-60L, SUD20N10-66L, SUD20P15-306, SUD23N06-31, SUD23N06-31L, SUD25N04-25
Keywords - SUD17N25-165 MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: AOW482 | SUB85N10-10 | AOW4S60 | JCS10N60ST | AP03N70I-A-HF | 4N65KG-TF1-T | AOU2N60
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