All MOSFET. SUD42N03-3M9P Datasheet

 

SUD42N03-3M9P MOSFET. Datasheet pdf. Equivalent


   Type Designator: SUD42N03-3M9P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 73.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 42 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 67 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 680 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0039 Ohm
   Package: TO-252

 SUD42N03-3M9P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SUD42N03-3M9P Datasheet (PDF)

 ..1. Size:128K  vishay
sud42n03-3m9p.pdf

SUD42N03-3M9P
SUD42N03-3M9P

SUD42N03-3m9PVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.0039 at VGS = 10 V 107d TrenchFET Power MOSFET30 670.0045 at VGS = 4.5 V 103d 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC Converters- Sy

 6.1. Size:128K  vishay
sud42n03.pdf

SUD42N03-3M9P
SUD42N03-3M9P

SUD42N03-3m9PVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.0039 at VGS = 10 V 107d TrenchFET Power MOSFET30 670.0045 at VGS = 4.5 V 103d 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC Converters- Sy

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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