All MOSFET. SUM09N20-270 Datasheet

 

SUM09N20-270 Datasheet and Replacement


   Type Designator: SUM09N20-270
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 75 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.27 Ohm
   Package: TO-263
 

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SUM09N20-270 Datasheet (PDF)

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SUM09N20-270

SUM09N20-270Vishay SiliconixN-Channel 200 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature0.270 at VGS = 10 V 9 Low Thermal Resistance Package2000.300 at VGS = 6 V 8.5 Compliant to RoHS Directive 2002/95/ECDTO-263GG D STop ViewSOrdering Information: SUM09N20-2

Datasheet: SUD50P04-23 , SUD50P04-40P , SUD50P06-15 , SUD50P06-15L , SUD50P08-25L , SUD50P08-26 , SUD50P10-43 , SUD50P10-43L , IRFP460 , SUM110N03-03P , SUM110N03-04P , SUM110N04-03 , SUM110N04-03P , SUM110N04-04 , SUM110N04-05H , SUM110N04-2M1P , SUM110N04-2M3L .

History: PMN27UP | AP9995GJ-HF | MPSW65M046CFD | NCE50NF220K | CEP05N8 | 2SJ409L | APT20M40HVR

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