SUM09N20-270 PDF and Equivalents Search

 

SUM09N20-270 Specs and Replacement

Type Designator: SUM09N20-270

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 60 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 75 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.27 Ohm

Package: TO-263

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SUM09N20-270 datasheet

 ..1. Size:162K  vishay
 sum09n20-270.pdf pdf_icon

SUM09N20-270

SUM09N20-270 Vishay Siliconix N-Channel 200 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 0.270 at VGS = 10 V 9 Low Thermal Resistance Package 200 0.300 at VGS = 6 V 8.5 Compliant to RoHS Directive 2002/95/EC D TO-263 G G D S Top View S Ordering Information SUM09N20-2... See More ⇒

Detailed specifications: SUD50P04-23, SUD50P04-40P, SUD50P06-15, SUD50P06-15L, SUD50P08-25L, SUD50P08-26, SUD50P10-43, SUD50P10-43L, IRF640, SUM110N03-03P, SUM110N03-04P, SUM110N04-03, SUM110N04-03P, SUM110N04-04, SUM110N04-05H, SUM110N04-2M1P, SUM110N04-2M3L

Keywords - SUM09N20-270 MOSFET specs

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