SUM1960NE Specs and Replacement
Type Designator: SUM1960NE
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.32 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 6 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
Package: SOT-363
SUM1960NE substitution
- MOSFET ⓘ Cross-Reference Search
SUM1960NE datasheet
sum1960ne.pdf
SUM1960NE 0.32A , 60V , RDS(ON) 2 N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION SOT-363 These miniature surface mount MOSFETs utilize a high A E cell density trench process to provide low RDS(on) and to L ensure minimal power loss and heat dissipation... See More ⇒
Detailed specifications: MIC94051BM4TR, MIC94051YM4TR, MIC94052BC6TR, MIC94052YC6TR, MIC94053BC6TR, MIC94053YC6TR, MM109N06K, MM137N04K, 5N65, SUM2153, SUM23N15-73, SUM25P10-138, SUM27N20-78, SUM33N20-60P, SUM36N20-54P, SUM40N02-12P, SUM40N10-30
Keywords - SUM1960NE MOSFET specs
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History: BUK968R3-40E | BSO110N03MSG | BUK9637-100E
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