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SUM1960NE Datasheet and Replacement


   Type Designator: SUM1960NE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.32 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
   Package: SOT-363
 

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SUM1960NE Datasheet (PDF)

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SUM1960NE

SUM1960NE 0.32A , 60V , RDS(ON) 2 N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION SOT-363 These miniature surface mount MOSFETs utilize a high AEcell density trench process to provide low RDS(on) and to Lensure minimal power loss and heat dissipation

Datasheet: MIC94051BM4TR , MIC94051YM4TR , MIC94052BC6TR , MIC94052YC6TR , MIC94053BC6TR , MIC94053YC6TR , MM109N06K , MM137N04K , IRF4905 , SUM2153 , SUM23N15-73 , SUM25P10-138 , SUM27N20-78 , SUM33N20-60P , SUM36N20-54P , SUM40N02-12P , SUM40N10-30 .

History: AP5600N | IRFN3710 | STL2N80K5 | BSS606N | AP6679BGH | SM6A22NSF | 2SK856

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