All MOSFET. SUM25P10-138 Datasheet

 

SUM25P10-138 Datasheet and Replacement


   Type Designator: SUM25P10-138
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 88.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 16.7 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 105 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.138 Ohm
   Package: TO-263
 

 SUM25P10-138 substitution

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SUM25P10-138 Datasheet (PDF)

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SUM25P10-138

SUM25P10-138Vishay SiliconixP-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max.ID (A)c Qg (Typ.) 100 % Rg and UIS Tested0.138 at VGS = - 10 V - 16.3 Material categorization:0.141 at VGS = - 7.5 V - 16.1 24 nCFor definitions of compliance please see- 100www.vishay.com/doc?999120.142 at VGS = - 6 V - 16.

Datasheet: MIC94052YC6TR , MIC94053BC6TR , MIC94053YC6TR , MM109N06K , MM137N04K , SUM1960NE , SUM2153 , SUM23N15-73 , AON6380 , SUM27N20-78 , SUM33N20-60P , SUM36N20-54P , SUM40N02-12P , SUM40N10-30 , SUM40N15-38 , SUM45N25-58 , SUM47N10-24L .

History: SM6128NSQG | 2SK1021 | PSMN5R0-80BS | STW54NM65ND | SUM23N15-73 | MTD3055V | ME60N03-G

Keywords - SUM25P10-138 MOSFET datasheet

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