SUM25P10-138 Specs and Replacement
Type Designator: SUM25P10-138
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 88.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 16.7 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 105 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.138 Ohm
Package: TO-263
SUM25P10-138 substitution
- MOSFET ⓘ Cross-Reference Search
SUM25P10-138 datasheet
sum25p10-138.pdf
SUM25P10-138 Vishay Siliconix P-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A)c Qg (Typ.) 100 % Rg and UIS Tested 0.138 at VGS = - 10 V - 16.3 Material categorization 0.141 at VGS = - 7.5 V - 16.1 24 nC For definitions of compliance please see - 100 www.vishay.com/doc?99912 0.142 at VGS = - 6 V - 16.... See More ⇒
Detailed specifications: MIC94052YC6TR, MIC94053BC6TR, MIC94053YC6TR, MM109N06K, MM137N04K, SUM1960NE, SUM2153, SUM23N15-73, AON6380, SUM27N20-78, SUM33N20-60P, SUM36N20-54P, SUM40N02-12P, SUM40N10-30, SUM40N15-38, SUM45N25-58, SUM47N10-24L
Keywords - SUM25P10-138 MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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