All MOSFET. SUM25P10-138 Datasheet

 

SUM25P10-138 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SUM25P10-138
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 88.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 16.7 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 40 nC
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 105 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.138 Ohm
   Package: TO-263

 SUM25P10-138 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SUM25P10-138 Datasheet (PDF)

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 sum25p10-138.pdf

SUM25P10-138 SUM25P10-138

SUM25P10-138Vishay SiliconixP-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max.ID (A)c Qg (Typ.) 100 % Rg and UIS Tested0.138 at VGS = - 10 V - 16.3 Material categorization:0.141 at VGS = - 7.5 V - 16.1 24 nCFor definitions of compliance please see- 100www.vishay.com/doc?999120.142 at VGS = - 6 V - 16.

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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