All MOSFET. SUM25P10-138 Datasheet

 

SUM25P10-138 Datasheet and Replacement


   Type Designator: SUM25P10-138
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 88.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 16.7 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 105 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.138 Ohm
   Package: TO-263
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SUM25P10-138 Datasheet (PDF)

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SUM25P10-138

SUM25P10-138Vishay SiliconixP-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max.ID (A)c Qg (Typ.) 100 % Rg and UIS Tested0.138 at VGS = - 10 V - 16.3 Material categorization:0.141 at VGS = - 7.5 V - 16.1 24 nCFor definitions of compliance please see- 100www.vishay.com/doc?999120.142 at VGS = - 6 V - 16.

Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , IRFZ48N , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

History: 2SJ473-01S | IRF7759L2TR1PBF

Keywords - SUM25P10-138 MOSFET datasheet

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