SUM27N20-78 Specs and Replacement
Type Designator: SUM27N20-78
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 27 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 215 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.078 Ohm
Package: TO-263
SUM27N20-78 substitution
- MOSFET ⓘ Cross-Reference Search
SUM27N20-78 datasheet
sum27n20-78.pdf
SUM27N20-78 Vishay Siliconix N-Channel 200 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 0.078 at VGS = 10 V 27 Low Thermal Resistance Package 200 0.083 at VGS = 6 V 26 PWM Optimized for Fast Switching Compliant to RoHS Directive 2002/95/EC APPLICATIONS TO-263 Is... See More ⇒
Detailed specifications: MIC94053BC6TR, MIC94053YC6TR, MM109N06K, MM137N04K, SUM1960NE, SUM2153, SUM23N15-73, SUM25P10-138, IRF530, SUM33N20-60P, SUM36N20-54P, SUM40N02-12P, SUM40N10-30, SUM40N15-38, SUM45N25-58, SUM47N10-24L, SUM50N06-16L
Keywords - SUM27N20-78 MOSFET specs
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