All MOSFET. SUM27N20-78 Datasheet

 

SUM27N20-78 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SUM27N20-78
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 27 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 40 nC
   trⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 215 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.078 Ohm
   Package: TO-263

 SUM27N20-78 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SUM27N20-78 Datasheet (PDF)

 ..1. Size:164K  vishay
 sum27n20-78.pdf

SUM27N20-78 SUM27N20-78

SUM27N20-78Vishay SiliconixN-Channel 200 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature0.078 at VGS = 10 V 27 Low Thermal Resistance Package2000.083 at VGS = 6 V 26 PWM Optimized for Fast Switching Compliant to RoHS Directive 2002/95/ECAPPLICATIONSTO-263 Is

Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 60N06 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

History: IXTP22N15MA

 

 
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