All MOSFET. SUM33N20-60P Datasheet

 

SUM33N20-60P Datasheet and Replacement


   Type Designator: SUM33N20-60P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 156 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 33 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 170 nS
   Cossⓘ - Output Capacitance: 271 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: TO-263
 

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SUM33N20-60P Datasheet (PDF)

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SUM33N20-60P

SUM33N20-60PNew ProductVishay SiliconixN-Channel 200-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSV(BR)DSS (V) rDS(on) ()ID (A) Qg (Typ) 150 C Junction Temperature0.059 at VGS = 15 V33 RoHS200 53 100 % UIS and Rg Tested COMPLIANT0.060 at VGS = 10 V33APPLICATIONS Power Supply Lighting IndustrialDTO-263

Datasheet: MIC94053YC6TR , MM109N06K , MM137N04K , SUM1960NE , SUM2153 , SUM23N15-73 , SUM25P10-138 , SUM27N20-78 , IRLB4132 , SUM36N20-54P , SUM40N02-12P , SUM40N10-30 , SUM40N15-38 , SUM45N25-58 , SUM47N10-24L , SUM50N06-16L , SUM50P10-42 .

History: RYC002N05 | SIHFBC30A | DMG7N65SJ3 | SVGP159R3NL5TR | AP85T03GP | SM6107PSU | TSM3548DCX6

Keywords - SUM33N20-60P MOSFET datasheet

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