All MOSFET. SUP18N15-95 Datasheet

 

SUP18N15-95 Datasheet and Replacement


   Type Designator: SUP18N15-95
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 88 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 18 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 115 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.095 Ohm
   Package: TO-220AB
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SUP18N15-95 Datasheet (PDF)

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SUP18N15-95

SUP18N15-95Vishay SiliconixN-Channel 150-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)Available 175 C Junction Temperature0.095 at VGS = 10 V18RoHS*1500.100 at VGS = 6 V17.5COMPLIANTTO-220ABDDRAIN connected to TABGG D STop ViewSN-Channel MOSFETOrdering Information: SUP18N15-95 SUP18N1

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: 2SK3192 | FQD4N25TM

Keywords - SUP18N15-95 MOSFET datasheet

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