All MOSFET. SUP18N15-95 Datasheet

 

SUP18N15-95 Datasheet and Replacement


   Type Designator: SUP18N15-95
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 88 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 115 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.095 Ohm
   Package: TO-220AB
 

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SUP18N15-95 Datasheet (PDF)

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SUP18N15-95

SUP18N15-95Vishay SiliconixN-Channel 150-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)Available 175 C Junction Temperature0.095 at VGS = 10 V18RoHS*1500.100 at VGS = 6 V17.5COMPLIANTTO-220ABDDRAIN connected to TABGG D STop ViewSN-Channel MOSFETOrdering Information: SUP18N15-95 SUP18N1

Datasheet: SUM90N06-4M4P , SUM90N06-5M5P , SUM90N08-4M8P , SUM90N08-6M2P , SUM90N08-7M6P , SUM90N10-8M2P , SUM90P10-19 , SUM90P10-19L , NCEP15T14 , SUP25P10-138 , SUP28N15-52 , SUP36N20-54P , SUP40N10-30 , SUP40N25-60 , SUP40P10-43 , SUP45N03-13L , SUP50N03-5M1P .

History: IXTH6N100D2 | PMG370XN | SIHFI540G | IXTH6N120 | IRLH5036 | SWK15N04V

Keywords - SUP18N15-95 MOSFET datasheet

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