All MOSFET. SUP28N15-52 Datasheet

 

SUP28N15-52 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SUP28N15-52
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 28 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 33 nC
   trⓘ - Rise Time: 70 nS
   Cossⓘ - Output Capacitance: 216 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.052 Ohm
   Package: TO-220AB

 SUP28N15-52 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SUP28N15-52 Datasheet (PDF)

 ..1. Size:163K  vishay
 sup28n15-52.pdf

SUP28N15-52 SUP28N15-52

SUP28N15-52Vishay SiliconixN-Channel 150-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature0.052 at VGS = 10 V 28150 PWM Optimized0.060 at VGS = 6 V 26 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchTO-220ABDGDRAIN connected to TABG D S

 6.1. Size:161K  vishay
 sup28n15.pdf

SUP28N15-52 SUP28N15-52

SUP28N15-52Vishay SiliconixN-Channel 150-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature0.052 at VGS = 10 V 28150 PWM Optimized0.060 at VGS = 6 V 26 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchTO-220ABDGDRAIN connected to TABG D S

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: IXFT13N100

 

 
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