All MOSFET. SUP40N10-30 Datasheet

 

SUP40N10-30 Datasheet and Replacement


   Type Designator: SUP40N10-30
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 107 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 270 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: TO-220AB
 

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SUP40N10-30 Datasheet (PDF)

 ..1. Size:75K  vishay
sup40n10-30 sup40n10.pdf pdf_icon

SUP40N10-30

SUP40N10-30Vishay SiliconixN-Channel 100-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A)Available 175 C Junction Temperature0.030 at VGS = 10 V40RoHS*1000.034 at VGS = 6 V37.5COMPLIANTTO-220AB DGG D S Top View SOrdering Information: SUP40N10-30 SUP40N10-30-E3 (Lead (Pb)-free)N-Channe

 8.1. Size:58K  vishay
sup40n06-25l sub40n06-25l.pdf pdf_icon

SUP40N10-30

SUP/SUB40N06-25LVishay SiliconixN-Channel 60-V (D-S), 175_C MOSFET, Logic LevelPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)0.022 @ VGS = 10 V 4060600.025 @ VGS = 4.5 V 40TO-220ABDTO-263GDRAIN connected to TABG D STop ViewG D SSUB40N06-25L STop ViewN-Channel MOSFETSUP40N06-25LABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol

 8.2. Size:173K  vishay
sup40n25-60.pdf pdf_icon

SUP40N10-30

SUP40N25-60Vishay SiliconixN-Channel 250 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSVDS (V) RDS(on) () ID (A) Qg (Typ) 175 C Junction TemperatureRoHS0.060 at VGS = 10 V COMPLIANT 40 New Low Thermal Resistance Package250 950.064 at VGS = 6 V38.7 Compliant to RoHS Directive 2002/95/ECAPPLICATIONSTO-220AB Ind

 9.1. Size:168K  vishay
sup40p10-43.pdf pdf_icon

SUP40N10-30

New ProductSUP40P10-43Vishay SiliconixP-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) RDS(on) ()ID (A)c Qg (Typ.) TrenchFET Power MOSFET0.043 at VGS = - 10 V - 36- 100 54 nC 100 % Rg Tested0.048 at VGS = - 4.5 V - 34.4 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS LCD Inve

Datasheet: SUM90N08-7M6P , SUM90N10-8M2P , SUM90P10-19 , SUM90P10-19L , SUP18N15-95 , SUP25P10-138 , SUP28N15-52 , SUP36N20-54P , IRF1405 , SUP40N25-60 , SUP40P10-43 , SUP45N03-13L , SUP50N03-5M1P , SUP50N10-21P , SUP53P06-20 , SUP57N20-33 , SUP60N02-4M5P .

History: PSMNR60-25YLH | 2SK1916 | AP3A010MT | BLP10N20J-B | SUM90N10-8M2P | SI4686DY | HGB014N08A

Keywords - SUP40N10-30 MOSFET datasheet

 SUP40N10-30 cross reference
 SUP40N10-30 equivalent finder
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