SUP40N10-30 MOSFET Datasheet: N-Ch, 100V, 40A. Full specification with pinout and replacement list

SUP40N10-30 Specs and Replacement

Type Designator: SUP40N10-30

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 107 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 270 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm

Package: TO-220AB

SUP40N10-30 substitution

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SUP40N10-30 datasheet

..1. Size:75K vishay
sup40n10-30 sup40n10.pdf pdf_icon

SUP40N10-30 Vishay Siliconix N-Channel 100-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) rDS(on) ( )ID (A) Available 175 C Junction Temperature 0.030 at VGS = 10 V 40 RoHS* 100 0.034 at VGS = 6 V 37.5 COMPLIANT TO-220AB D G G D S Top View S Ordering Information SUP40N10-30 SUP40N10-30-E3 (Lead (Pb)-free) N-Channe... See More ⇒

8.1. Size:58K vishay
sup40n06-25l sub40n06-25l.pdf pdf_icon

SUP/SUB40N06-25L Vishay Siliconix N-Channel 60-V (D-S), 175_C MOSFET, Logic Level PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 40 60 60 0.025 @ VGS = 4.5 V 40 TO-220AB D TO-263 G DRAIN connected to TAB G D S Top View G D S SUB40N06-25L S Top View N-Channel MOSFET SUP40N06-25L ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol... See More ⇒

8.2. Size:173K vishay
sup40n25-60.pdf pdf_icon

SUP40N25-60 Vishay Siliconix N-Channel 250 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS VDS (V) RDS(on) ( ) ID (A) Qg (Typ) 175 C Junction Temperature RoHS 0.060 at VGS = 10 V COMPLIANT 40 New Low Thermal Resistance Package 250 95 0.064 at VGS = 6 V 38.7 Compliant to RoHS Directive 2002/95/EC APPLICATIONS TO-220AB Ind... See More ⇒

9.1. Size:168K vishay
sup40p10-43.pdf pdf_icon

New Product SUP40P10-43 Vishay Siliconix P-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) RDS(on) ( ) ID (A)c Qg (Typ.) TrenchFET Power MOSFET 0.043 at VGS = - 10 V - 36 - 100 54 nC 100 % Rg Tested 0.048 at VGS = - 4.5 V - 34.4 Compliant to RoHS Directive 2002/95/EC APPLICATIONS LCD Inve... See More ⇒

Detailed specifications: SUM90N08-7M6P, SUM90N10-8M2P, SUM90P10-19, SUM90P10-19L, SUP18N15-95, SUP25P10-138, SUP28N15-52, SUP36N20-54P, IRF830, SUP40N25-60, SUP40P10-43, SUP45N03-13L, SUP50N03-5M1P, SUP50N10-21P, SUP53P06-20, SUP57N20-33, SUP60N02-4M5P