SUP40N10-30 - описание и поиск аналогов

SUP40N10-30 Vishay Siliconix N-Channel 100-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) rDS(on) ( )ID (A) Available 175 C Junction Temperature 0.030 at VGS = 10 V 40 RoHS* 100 0.034 at VGS = 6 V 37.5 COMPLIANT TO-220AB D G G D S Top View S Ordering Information SUP40N10-30 SUP40N10-30-E3 (Lead (Pb)-free) N-Channe

SUP/SUB40N06-25L Vishay Siliconix N-Channel 60-V (D-S), 175_C MOSFET, Logic Level PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 40 60 60 0.025 @ VGS = 4.5 V 40 TO-220AB D TO-263 G DRAIN connected to TAB G D S Top View G D S SUB40N06-25L S Top View N-Channel MOSFET SUP40N06-25L ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol

SUP40N25-60 Vishay Siliconix N-Channel 250 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS VDS (V) RDS(on) ( ) ID (A) Qg (Typ) 175 C Junction Temperature RoHS 0.060 at VGS = 10 V COMPLIANT 40 New Low Thermal Resistance Package 250 95 0.064 at VGS = 6 V 38.7 Compliant to RoHS Directive 2002/95/EC APPLICATIONS TO-220AB Ind

New Product SUP40P10-43 Vishay Siliconix P-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) RDS(on) ( ) ID (A)c Qg (Typ.) TrenchFET Power MOSFET 0.043 at VGS = - 10 V - 36 - 100 54 nC 100 % Rg Tested 0.048 at VGS = - 4.5 V - 34.4 Compliant to RoHS Directive 2002/95/EC APPLICATIONS LCD Inve