SUP85N10-10 Datasheet. Specs and Replacement

Type Designator: SUP85N10-10  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 250 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 85 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 90 nS

Cossⓘ - Output Capacitance: 665 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm

Package: TO-220AB

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SUP85N10-10 datasheet

 ..1. Size:95K  vishay
 sup85n10-10 sup85n10-10 sub85n10-10.pdf pdf_icon

SUP85N10-10

SUP85N10-10, SUB85N10-10 Vishay Siliconix N-Channel 100-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Maximum Junction Temperature 0.0105 at VGS = 10 V Compliant to RoHS Directive 2002/95/EC 100 85a 0.012 at VGS = 4.5 V TO-220AB D TO-263 G DRAIN connected to TAB G D S Top View S G D S SUB... See More ⇒

 ..2. Size:126K  vishay
 sup85n10-10 sub85n10-10.pdf pdf_icon

SUP85N10-10

SUP85N10-10, SUB85N10-10 Vishay Siliconix N-Channel 100-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Maximum Junction Temperature 0.0105 at VGS = 10 V Compliant to RoHS Directive 2002/95/EC 100 85a 0.012 at VGS = 4.5 V TO-220AB D TO-263 G DRAIN connected to TAB G D S Top View S G D S SUB... See More ⇒

 ..3. Size:100K  vishay
 sup85n10-10 sub85n10-10 2.pdf pdf_icon

SUP85N10-10

SUP/SUB85N10-10 Vishay Siliconix N-Channel 100-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) rDS(on) ( ) ID (A) Available 175 C Maximum Junction Temperature 0.0105 at VGS = 10 V RoHS* 100 85a COMPLIANT 0.012 at VGS = 4.5 V TO-220AB D TO-263 G DRAIN connected to TAB G D S Top View S G D S SUB85N10-10 N-Channel MOSFET ... See More ⇒

 0.1. Size:168K  vishay
 sup85n10-10p.pdf pdf_icon

SUP85N10-10

SUP85N10-10P Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) Definition TrenchFET Power MOSFET 0.010 at VGS = 10 V 100 85d 77 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC TO-220AB APPLICATIONS Industrial D G G D S Top View ... See More ⇒

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Detailed specifications: SUP70N03-09BP, SUP75N03-04, SUP75P03-07, SUP75P05-08, SUP85N02-03, SUP85N03-04P, SUP85N03-3M6P, SUP85N04-03, IRF540, SUP85N10-10P, SUP85N15-21, SUP90N03-03, SUP90N04-3M3P, SUP90N06-5M0P, SUP90N06-6M0P, SUP90N08-4M8P, SUP90N08-6M8P

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