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SUP85N10-10 Spec and Replacement


   Type Designator: SUP85N10-10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 85 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 90 nS
   Cossⓘ - Output Capacitance: 665 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm
   Package: TO-220AB

 SUP85N10-10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SUP85N10-10 Specs

 ..1. Size:95K  vishay
 sup85n10-10 sup85n10-10 sub85n10-10.pdf pdf_icon

SUP85N10-10

SUP85N10-10, SUB85N10-10 Vishay Siliconix N-Channel 100-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Maximum Junction Temperature 0.0105 at VGS = 10 V Compliant to RoHS Directive 2002/95/EC 100 85a 0.012 at VGS = 4.5 V TO-220AB D TO-263 G DRAIN connected to TAB G D S Top View S G D S SUB... See More ⇒

 ..2. Size:126K  vishay
 sup85n10-10 sub85n10-10.pdf pdf_icon

SUP85N10-10

SUP85N10-10, SUB85N10-10 Vishay Siliconix N-Channel 100-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Maximum Junction Temperature 0.0105 at VGS = 10 V Compliant to RoHS Directive 2002/95/EC 100 85a 0.012 at VGS = 4.5 V TO-220AB D TO-263 G DRAIN connected to TAB G D S Top View S G D S SUB... See More ⇒

 ..3. Size:100K  vishay
 sup85n10-10 sub85n10-10 2.pdf pdf_icon

SUP85N10-10

SUP/SUB85N10-10 Vishay Siliconix N-Channel 100-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) rDS(on) ( ) ID (A) Available 175 C Maximum Junction Temperature 0.0105 at VGS = 10 V RoHS* 100 85a COMPLIANT 0.012 at VGS = 4.5 V TO-220AB D TO-263 G DRAIN connected to TAB G D S Top View S G D S SUB85N10-10 N-Channel MOSFET ... See More ⇒

 0.1. Size:168K  vishay
 sup85n10-10p.pdf pdf_icon

SUP85N10-10

SUP85N10-10P Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) Definition TrenchFET Power MOSFET 0.010 at VGS = 10 V 100 85d 77 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC TO-220AB APPLICATIONS Industrial D G G D S Top View ... See More ⇒

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Detailed specifications: SUP70N03-09BP , SUP75N03-04 , SUP75P03-07 , SUP75P05-08 , SUP85N02-03 , SUP85N03-04P , SUP85N03-3M6P , SUP85N04-03 , IRF540 , SUP85N10-10P , SUP85N15-21 , SUP90N03-03 , SUP90N04-3M3P , SUP90N06-5M0P , SUP90N06-6M0P , SUP90N08-4M8P , SUP90N08-6M8P .

Keywords - SUP85N10-10 MOSFET specs

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