SUU10P10-195 Specs and Replacement
Type Designator: SUU10P10-195
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 32.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 64 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.195 Ohm
Package: TO-251
SUU10P10-195 substitution
- MOSFET ⓘ Cross-Reference Search
SUU10P10-195 datasheet
suu10p10-195.pdf
SUU10P10-195 Vishay Siliconix P-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) Definition 0.195 at VGS = - 10 V - 8.8 TrenchFET Power MOSFET 0.200 at VGS = - 7.5 V - 8.7 12 100 % Rg and UIS Tested - 100 Compliant to RoHS Directive 2002/95/EC 0.207 at VGS = - 6 V - 8.6 ... See More ⇒
Detailed specifications: SUP90N08-4M8P, SUP90N08-6M8P, SUP90N08-7M7P, SUP90N08-8M2P, SUP90N10-8M8P, SUP90N15-18P, SUP90P06-09L, SUU09N10-76P, IRFB4115, SUV85N10-10, SM1105NSK, SM1105NSUB, SM1108NSF, SM1110NSA, SM1110NSC, SM1A01NFS, SM1A01NSF
Keywords - SUU10P10-195 MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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