All MOSFET. SUU10P10-195 Datasheet

 

SUU10P10-195 Datasheet and Replacement


   Type Designator: SUU10P10-195
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 32.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 64 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.195 Ohm
   Package: TO-251
 

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SUU10P10-195 Datasheet (PDF)

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SUU10P10-195

SUU10P10-195Vishay SiliconixP-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () Max. ID (A) Qg (Typ.)Definition0.195 at VGS = - 10 V - 8.8 TrenchFET Power MOSFET0.200 at VGS = - 7.5 V - 8.7 12 100 % Rg and UIS Tested- 100 Compliant to RoHS Directive 2002/95/EC0.207 at VGS = - 6 V - 8.6

Datasheet: SUP90N08-4M8P , SUP90N08-6M8P , SUP90N08-7M7P , SUP90N08-8M2P , SUP90N10-8M8P , SUP90N15-18P , SUP90P06-09L , SUU09N10-76P , IRFP250N , SUV85N10-10 , SM1105NSK , SM1105NSUB , SM1108NSF , SM1110NSA , SM1110NSC , SM1A01NFS , SM1A01NSF .

History: CJP85N80 | BSC042NE7NS3G | RU1H130R | AOU2N60A | 2SK3774-01S | NCEAP6050AQU | STL18N65M2

Keywords - SUU10P10-195 MOSFET datasheet

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