SUU10P10-195 MOSFET. Datasheet pdf. Equivalent
Type Designator: SUU10P10-195
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 32.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
|Id|ⓘ - Maximum Drain Current: 8.8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 23.5 nC
trⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 64 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.195 Ohm
Package: TO-251
SUU10P10-195 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SUU10P10-195 Datasheet (PDF)
..1. Size:99K vishay
suu10p10-195.pdf
suu10p10-195.pdf
SUU10P10-195Vishay SiliconixP-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () Max. ID (A) Qg (Typ.)Definition0.195 at VGS = - 10 V - 8.8 TrenchFET Power MOSFET0.200 at VGS = - 7.5 V - 8.7 12 100 % Rg and UIS Tested- 100 Compliant to RoHS Directive 2002/95/EC0.207 at VGS = - 6 V - 8.6
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
