MM20N050P Specs and Replacement
Type Designator: MM20N050P
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 180 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 28 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 28 nS
Cossⓘ - Output Capacitance: 990 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
Package: TO-3P
MM20N050P substitution
- MOSFET ⓘ Cross-Reference Search
MM20N050P datasheet
mm20n050p.pdf
MM20N050P 500V 20A N-Channel MOSFET March 2011 PRELIMINARY RoHS Compliant FEATURES Low drain-source ON resistance High forward transfer admittance Repetitive avalanche ratings Simple drive requirements Ease of paralleling APPLICATIONS 1.GATE Switching power supplies 2.DRAIN Motor controls 3.SOURCE Inverters and choppers Audio a... See More ⇒
Detailed specifications: SM2328NSAN, SM2558NSUC, SM2602NSC, SM2603PSC, SM2A01NSFP, SM2A02NSU, SM2A06NSFP, MM15N050P, STP80NF70, MM68N06K, MM9N090P, MMBF0202PLT1, MMBF2202PT1, MMBFJ108, MMBFJ110, MMBFJ111, MMBFJ112
Keywords - MM20N050P MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: IRF6645PBF | SM4365NAKP | SRH04P500L | CMPDM8002A | AM4890N | MM15N050P | SPP22N05
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