MM9N090P Specs and Replacement
Type Designator: MM9N090P
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 140 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 780 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
Package: TO-3P
MM9N090P substitution
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MM9N090P datasheet
mm9n090p.pdf
MM9N090P 900V 9A N-Channel MOSFET March 2011 PRELIMINARY RoHS Compliant FEATURES Low drain-source ON resistance High forward transfer admittance Repetitive avalanche ratings Simple drive requirements Ease of paralleling APPLICATIONS 1.GATE Switching power supplies 2.DRAIN Motor controls 3.SOURCE Inverters and choppers Audio amp... See More ⇒
Detailed specifications: SM2602NSC , SM2603PSC , SM2A01NSFP , SM2A02NSU , SM2A06NSFP , MM15N050P , MM20N050P , MM68N06K , TK10A60D , MMBF0202PLT1 , MMBF2202PT1 , MMBFJ108 , MMBFJ110 , MMBFJ111 , MMBFJ112 , MMBFJ113 , MMBFJ305 .
History: 1N40 | IPC100N04S5L-1R1
Keywords - MM9N090P MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: 1N40 | IPC100N04S5L-1R1
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