MMIX1F420N10T MOSFET Datasheet: N-Ch, 100V, 334A. Full specification with pinout and replacement list

MMIX1F420N10T Specs and Replacement

Type Designator: MMIX1F420N10T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 680 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 334 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 155 nS

Cossⓘ - Output Capacitance: 4390 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0026 Ohm

Package: ISOLATED TAB

MMIX1F420N10T substitution

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MMIX1F420N10T datasheet

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mmix1f420n10t.pdf pdf_icon

Advance Technical Information GigaMOSTM TrenchTM VDSS = 100V MMIX1F420N10T HiperFETTM ID25 = 334A Power MOSFET RDS(on) 2.6m Trr 140ns (Electrically Isolated Tab) D N-Channel Enhancement Mode Avalanche Rated G Fast Intrinsic Diode S Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C 100 V Isolated Tab ... See More ⇒

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mmix1f40n110p.pdf pdf_icon

Advance Technical Information PolarTM HiperFETTM VDSS = 1100V MMIX1F40N110P Power MOSFET ID25 = 24A RDS(on) 290m (Electrically Isolated Tab) trr 300ns D N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 1100 V Isolated Tab VDGR TJ ... See More ⇒

8.1. Size:233K ixys
mmix1f360n15t2.pdf pdf_icon

Preliminary Technical Information TrenchT2TM GigaMOSTM VDSS = 150V MMIX1F360N15T2 HiperFETTM ID25 = 235A Power MOSFET RDS(on) 4.4m trr 150ns (Electrically Isolated Tab) D N-Channel Enhancement Mode G Avalanche Rated Fast Intrinsic Diode S Symbol Test Conditions Maximum Ratings Isolated Tab VDSS TJ = 25 C to 175 C ... See More ⇒